CTA24-800BW C3 SEMI, CTA24-800BW Datasheet - Page 2

• Manufacturer Part Number: CTA24-800BW
• Description: TRIAC, 800V, 25A, TO-220AB
• Manufacturer: C3 SEMI

Specifications of CTA24-800BW

• Peak Repetitive Off-state Voltage, Vdrm: 800V
• Gate Trigger Current Max (qi), Igt: 50mA
• On State Rms Current It(rms): 25A
• Peak Non Rep Surge Current Itsm 50hz: 250A
• Holding Current Max Ih: 75mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Static Characteristics
V
V to MAX @ Threshold Voltage
R d MAX @ Dynamic Resistance
I
I
Thermal Resistances
Junction to Case (AC)
Junction to Case (AC)
Junction to Ambient
Junction to Ambient
DRM
RRM
T
ISO9001 Certified
Approvals
UL - E72445
REF. Min.
M
MAX @ I
M
© 2007 C3 Semiconductors, LLC. All Rights Reserved. Specifications are subject to change without prior notice. C3 Semiconductors trademark and its logo are tradmarks of C3 Semiconductors, LLC.
A
B
C
D
G
H
K
N
O
P
Q
E
F
J
L
I
MAX @ V
MAX @ V
Millimeters
15.24
12.78
15.49 16
2.49
2.39
0.69
1.22
4.62
0.46
6.48
3.78
2.59
0.99
9.96
0.99
E
TM
DRM
= 35 A, tp = 380µs
DRM
Weight: 2.3g (0.08 oz)
J
Typ.
3.23
2.67
D
Dimensions
= V
= V
P
RRM
RRM
L
Max.
15.75
13.79
10.36
16.51
2.69
2.84
0.94
1.32
4.83
0.61
6.88
3.89
2.9
1.55
1.55
O
C3 Semiconductor, LLC
N
B
A
NOTE 2
C
Inches
Min.
NOTE 2
NOTE 2
0.094
0.027
0.098
0.255
0.102
0.039
0.048
0.182
0.018
0.149
0.039
0.6
0.503
0.392
0.61
F
TO-220AB Isolated
TO-220AB Isolated
Typ.
0.127
0.105
Q
I
0.63
G
TO-220AB
TO-220AB
H
Max.
0.106
0.62
0.037
0.112
0.271
0.114
0.061
0.052
0.19
0.024
0.153
0.061
0.543
0.408
0.65
Tj = 25˚C
Tj = 125˚C
Tj = 125˚C
Tj = 25˚C
Tj = 125˚C
K
For recommended applications and more information contact:
For recommended applications and more information contact:
USA : Sales Support
USA : Sales Support
Email : [e-mail]
SYMBOL
R th(j-c)
R th(j-c)
R th(j-a)
R th(j-a)
1000.0
30
25
20
15
10
100.0
5
0
10.0
1.0
Fig. 1: Power dissipation versus RMS on-state current (full cycle).
0
0.5
3
RATING
0.8 ˚ C/W
1.7 ˚ C/W
60 ˚ C/W
60 ˚ C/W
1
[phone]
16m Ω
1.55V
0.85V
3mA
5µA
on-state voltage (instantaneous values)
6
1.5
Fig. 3: On-state current versus
WEB SITE: http://www.C3semi.com
9
2
SERIES
I
Part Number Selection
Part Number
CTA/CTB24-xxxB
CTA/CTB24-xxxBW
CTA/CTB24-xxxCW
Part Number Designation
CT
T(RMS)
V
12
2.5
© 2007 C3 Semiconductors, Specifications subject to change without notice.
TM
[V]
[A]
15
3
3.5
18
Isolation Type
A: Isolated
B: Non-Isolated
24
4
21
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800, 1000
Rated Current
24:25 Amp
4.5
Voltage [Vpk]
24
5
27
250
160
120
100
80
60
50
40
30
20
10
Maximum
Blocking Voltage
400:400Vpk
600:600Vpk
800:800Vpk
1000: 1000Vpk
25Amp - 400/600/800/1000V - TRIAC
1
30
25
20
15
10
5
0
CW
50
G T
I
Fig. 4: Non-repetitive surge peak on-state
[mA]
50mA
50mA
35mA
CTA/CTB24
60
Type
B: Standard (I
BW: Alternistor/No Snubber (I
CW: Alternistor/No Snubber (I
current versus number of cycles.
Fig. 2: RMS on-state current versus
case temperature (full cycle)
70
Number of Cycles
10
Alternistor/No Snubber TO-220AB
Alternistor/No Snubber TO-220AB
80
Packaging
Blank: Bulk
PT: Plastic Tube
T
Type
Isolated
C
Standard
GT
[˚C]
=50mA)
90
100
100
Non-Repetitive
Tj initial = 25˚C
Non-Isolated
110
Package
GT
GT
TO-220AB
=35mA)
=50mA)
120
1000
130