BTA316-600ET NXP Semiconductors, BTA316-600ET Datasheet - Page 3
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BTA316-600ET
Manufacturer Part Number
BTA316-600ET
Description
TRIAC,600V,3 QUADRANT,SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.BTA316-600ET127.pdf
(14 pages)
Specifications of BTA316-600ET
Peak Repetitive Off-state Voltage, Vdrm
600V
On State Rms Current It(rms)
16A
Peak Non Rep Surge Current Itsm 50hz
150A
Holding Current Max Ih
15mA
Gate Trigger Voltage Max Vgt
1.5V
Peak Gate
RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BTA316-600ET
Manufacturer:
NXP
Quantity:
10 000
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA316-600ET
Product data sheet
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
T
/dt
I
T(RMS)
(A)
20
16
12
8
4
0
-50
base temperature; maximum values
RMS on-state current as a function of mounting
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I2t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
0
50
100
All information provided in this document is subject to legal disclaimers.
T
003aab777
mb
( C)
Rev. 02 — 29 November 2010
150
Conditions
full sine wave; T
see
full sine wave; T
see
full sine wave; T
over any 20 ms period
t
I
p
T
= 10 ms; sine-wave pulse
= 20 A; I
Figure
Figure
Fig 2.
G
1; see
4; see
= 0.2 A; dI
I
T(RMS)
(A)
mb
j(init)
j(init)
60
50
40
30
20
10
Figure 2
Figure 5
0
10
≤ 126 °C; see
duration; maximum values
RMS on-state current as a function of surge
= 25 °C; t
= 25 °C; t
2
G
/dt = 0.2 A/µs
p
p
10
= 20 ms;
= 16.7 ms
Figure
1
BTA316-600ET
3;
1
surge duration (s)
Min
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2010. All rights reserved.
3Q Hi-Com Triac
003aaf674
150
Max
600
16
140
150
98
100
2
5
0.5
150
10
Unit
V
A
A
A
A
A/µs
A
W
W
°C
°C
3 of 14
2
s