CTB12-1000B C3 SEMI, CTB12-1000B Datasheet - Page 2
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CTB12-1000B
Manufacturer Part Number
CTB12-1000B
Description
TRIAC, 1KV, 12A, TO-220AB
Manufacturer
C3 SEMI
Datasheet
1.CTA12-400C.pdf
(2 pages)
Specifications of CTB12-1000B
Peak Repetitive Off-state Voltage, Vdrm
1kV
Gate Trigger Current Max (qi), Igt
50mA
On State Rms Current It(rms)
12A
Peak Non Rep Surge Current Itsm 50hz
120A
Holding Current Max Ih
50mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
(For CTA series)
ISO9001 Certified
Approvals
UL Recognized Component - E72445
© 2007 C3 Semiconductor, All Rights Reserved. Specifications are subject to change without prior notice. C3 Semiconductor and the C3 Semiconductor l ogo are trademarks of C3 Semiconductor, LLC.
Static Characteristics
V
V to MAX @ Threshold Voltage
R d MAX @ Dynamic Resistance
I
I
Thermal Resistances
Junction to Case (AC)
Junction to Case (AC)
Junction to Ambient
Junction to Ambient
DRM
RRM
T
REF. Min.
M
MAX @ I
M
A
B
C
D
G
H
K
N
O
P
Q
E
F
J
L
I
MAX @ V
MAX @ V
Millimeters
15.24
12.78
15.49 16
9.96
0.69
1.22
4.62
0.46
2.49
2.39
6.48
3.78
2.59
0.99
0.99
E
TM
DRM
=17 A, tp = 380µs
DRM
Weight: 2.3g (0.08 oz)
J
Typ.
3.23
2.67
D
Dimensions
= V
= V
P
RRM
RRM
15.75
13.79
10.36
16.51
L
Max.
C3 Semiconductor, LLC
0.94
1.32
4.83
0.61
2.84
2.69
6.88
3.89
2.9
1.55
1.55
O
N
B
A
NOTE 2
C
NOTE 2
Inches
Min.
NOTE 2
0.6
0.503
0.392
0.027
0.048
0.182
0.018
0.098
0.094
0.255
0.149
0.61
0.102
0.039
0.039
F
TO-220AB Isolated
TO-220AB Isolated
Typ.
0.127
0.63
0.105
Q
I
G
TO-220AB
TO-220AB
H
Max.
0.62
0.543
0.408
0.037
0.052
0.19
0.024
0.112
0.106
0.271
0.153
0.65
0.114
0.061
0.061
Tj = 25˚C
Tj = 125˚C
Tj = 125˚C
Tj = 25˚C
Tj = 125˚C
K
SYMBOL
R th(j-c)
R th(j-c)
R th(j-a)
R th(j-a)
For recommended applications and more information contact:
For recommended applications and more information contact:
USA : Sales Support
USA : Sales Support
C3 Semiconductors, LLC. 2320 Paseo de las Americas, Ste. 104, San Diego, CA 92154
Email : sales@c3semi.com
14
12
10
8
6
4
2
0
Fig. 1: Power dissipation versus RMS on-state current (full cycle).
0
100.0
10.0
1.0
2
0.5
on-state voltage (instantaneous values)
RATING
1.4 ˚ C/W
2.3 ˚ C/W
1
60 ˚ C/W
60 ˚ C/W
4
35mΩ
1.55V
0.85V
1mA
5µA
Fig. 3: On-state current versus
1.5
(888) 882-8689
6
2
I
WEB SITE: http://www.C3semi.com
T(RMS)
V
8
2.5
TM
SERIES
Part Number Selection
Part Number
CTA/CTB12-xxxB
CTA/CTB12-xxxBW
CTA/CTB12-xxxC
CTA/CTB12-xxxCW
CTA/CTB12-xxxSW
CTA/CTB12-xxxTW
Part Number Designation
CT
[V]
[A]
10
3
© 2007 C3 Semiconductors, Speci cations subject to change without notice.
3.5
12
4
Isolation Type
A: Isolated
B: Non-Isolated
14
4.5
12
16
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800
5
Rated Current
12: 12 Amp
Voltage [Vpk]
18
250
160
120
100
80
60
50
40
30
20
10
Maximum
Blocking Voltage
400: 400Vpk
600: 600Vpk
800: 800Vpk
1000: 1000Vpk
1
12Amp - 400/600/800/1000V - TRIAC
18
16
14
12
10
8
6
4
2
0
80
I
CW
Fig. 4: Non-repetitive surge peak on-state
GT
50mA
50mA
25mA
35mA
10mA
5mA
[mA]
current versus number of cycles.
Fig. 2: RMS on-state current versus
Type
B: Standard (I
BW: Alternistor/No Snubber (I
C: Standard (I
CW: Alternistor/No Snubber (I
SW: Logic Level (I
TW: Logic Level (I
CTA/CTB12
90
case temperature (full cycle)
Alternistor/No Snubber TO-220AB
Alternistor/No Snubber TO-220AB
Number of Cycles
10
Logic Level
Logic Level
100
Standard
Standard
T
Packaging
Blank: Bulk
PT: Plastic Tube
C
Type
GT
GT
[˚C]
Isolated
=50mA)
=25mA)
GT
GT
110
=5mA)
=10mA)
100
Non-Repetitive
Tj initial = 25˚C
Non-Isolated
TO-220AB
TO-220AB
TO-220AB
TO-220AB
Package
120
GT
GT
=35mA)
=50mA)
1000
130