SI9933BDY-T1-GE3 Vishay, SI9933BDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI9933BDY-T1-GE3
• Description: DUAL P CHANNEL MOSFET, -20V, 4.7A
• Manufacturer: Vishay

Specifications of SI9933BDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 4.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72748.
Document Number: 72748
S09-1925-Rev. C, 28-Sep-09
0.01
0.1
2
1
10 -
4
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10 -
2
10 -
1
1
Vishay Siliconix
Si9933BDY
www.vishay.com
10
5