BC847B MULTICOMP, BC847B Datasheet
BC847B
Specifications of BC847B
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BC847B Summary of contents
Page 1
... Total Power Dissipation amb Junction Temperature Features: • • Silicon planar epitaxial transistors. • • General purpose NPN transistors. Symbol V CES V CEO 25°C P tot T j Page 1 Package Outline Details Dimensions : Millimetres BC847B 50 45 Maximum 200 250 150 Units °C 09/05/08 V1.1 ...
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... 25°C P tot T stg (j-a) I CBO (sat (sat (sat (sat) Page 2 BC847B 125 Minimum >100 Typical 2 BC847B Maximum 100 200 250 - -55 to +150 Maximum 150 = 500 15 < 5 Typical 660 580 to 700 < 770 Typical 90 < 250 Typical 700 Typical 200 < 600 Typical 900 ...
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... Small Signal Current Gain kHz I = 2mA Specifications CEO (mA) (V) Maximum 45 100 Symbol tot (dB) (mW) Maximum 10 250 Page 3 BC847B Typical 2.5 > 100 Typical 2 Maximum 10 Typical 150 > 200 Typical 290 < 450 Minimum 125 Maximum 900 Device Part Number Marking IF BC847B Unit pF MHz 09/05/08 V1.1 ...
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... BC847B General Purpose SMD NPN Transistors Notes: International Sales Offices: AUSTRALIA – Farnell Tel No: ++61 1300 361 005 Fax No: ++61 1300 361 225 AUSTRIA – Farnell Tel No 662 2180 680 Fax No 662 2180 670 BELGIUM – Farnell Tel No 475 2810 Fax No 227 3648 BRAZIL – ...