BC858C MULTICOMP, BC858C Datasheet - Page 2

• Manufacturer Part Number: BC858C
• Description: TRANSISTOR,PNP,SOT-23
• Manufacturer: MULTICOMP

Specifications of BC858C

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 30V
• Power Dissipation Pd: 250mW
• Dc Collector Current: 100mA
• Transistor Case Style: SOT-23
• No. Of Pins: 3
• Collector Emitter Voltage Vces: 250mV
• Dc Current Gain Hfe: 420
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Ratings (at T
Absolute Maximum Ratings
BC858C
SOT23 PNP Transistors
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage (+V
Collector-Emitter Voltage (Open Base)
Emitter-Base Voltage (Open Collector)
Collector Current (dc)
Collector Current (Peak Value)
Emitter Current (Peak Value)
Base Current (Peak Value)
Total Power Dissipation* up to T
Storage Temperature
Junction Temperature
Thermal Characteristics
T
Thermal Resistance
From Junction to Tab
From Tab to Soldering Points
From Soldering Points to Ambient
Small-Signal Current Gain
-I
Transition Frequency at f = 100MHz
-I
Noise Figure at R
-I
f = 1kHz; B = 200Hz
j
C
C
C
= P
= 2mA; -V
= 10mA; -V
= 200mA; -V
x
(R
th j–t
CE
+ R
A
CE
Limiting Values
CE
= 5V; f = 1kHz
= 25°C unless otherwise specified)
S
th t–s
= 5V
= 5V
= 2kW
-
+ R
th s–a
BE
) + T
= 1V)
amb
: 60°C
amb
Symbol
h
f
Symbol
F
T
fe
-V
-V
-V
Page 2
-V
R
R
R
-I
-I
-I
T
P
-I
th (s-a)
th (t-s)
T
CBO
CEX
CEO
EBO
CM
th (j-t)
EM
BM
stg
tot
C
-
-
j
Maximum
>
<
-
-
=
-
-
420 to 800
-55 to +150
BC858C
BC858C
100
10
100
200
250
150
30
280
5
60
90
-
-
10/05/08 V1.1
Units
MHz
Units
K/W
dB
mA
mV
°C
-
V
-
-