BF199 MULTICOMP, BF199 Datasheet - Page 2

• Manufacturer Part Number: BF199
• Description: TRANSISTOR, NPN, TO-92
• Manufacturer: MULTICOMP

Specifications of BF199

• Transistor Polarity: N Channel
• Collector Emitter Voltage V(br)ceo: 25V
• Gain Bandwidth Ft Typ: 550MHz
• Power Dissipation Pd: 350mW
• Dc Collector Current: 100mA
• Operating Temperature Range: -55°C To +150°C
• No. Of: RoHS Compliant
• Dc Current Gain Hfe: 40
• Rohs Compliant: Yes

Electrical Characteristics (T
Absolute Maximum Ratings
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at T
Derate above 25°C
Power Dissipation at T
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance
Junction to Case
Junction to Ambient in Free Air
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
DC Current Gain
Base Emitter On Voltage
Dynamic Characteristics
Transistors Frequency
Common Emitter Feedback
Capacitance
Noise Figure
BF199
NPN Silicon Transistor
Parameters
Parameters
a
c
= 25°C
= 25°C
Symbol
V
V
V
V
I
BE (on)
h
CBO
CEO
CBO
EBO
C
NF
FE
f
T
re
a
= 25°C unless specified otherwise)
V
CB
I
I
I
I
C
C
R
C
C
I
V
= 10V, I
C
I
S
I
= 7mA, V
= 7mA, V
Test Condition
E
C
= 5mA, V
= 4mA, V
CB
= 100µA, I
= 50Ω, f = 35MHz
= 10µA, I
= 1mA, I
f = 100MHz
= 20V, I
E
= 0, f = 1MHz
CE
CE
Page 2
CE
CE
B
C
E
E
= 10V
= 10V
= 0
= 10V,
= 10V,
= 0
= 0
= 0
Symbol
T
R
V
V
V
R
j,
th (j-c)
P
CEO
CBO
EBO
I
th (j-a)
T
C
D
stg
Minimum
25
40
40
400
4
-
-
-
-
-55 to +150
Value
Typical
100
350
125
357
4.0
2.8
1.0
8.0
25
40
2.5
-
-
-
-
-
-
-
-
Maximum
0.35
100
0.9
-
-
-
-
-
-
13/05/08 V1.1
mW/°C
mW/°C
Units
°C/W
mW
mA
°C
W
V
Units
MHz
nA
V
V
pF
dB
-