BSP89 Infineon Technologies, BSP89 Datasheet - Page 2
![MOSFET, N, LOGIC, SOT-223](/photos/19/8/190894/42334025_sml.jpg)
BSP89
Manufacturer Part Number
BSP89
Description
MOSFET, N, LOGIC, SOT-223
Manufacturer
Infineon Technologies
Datasheet
1.BSP89.pdf
(8 pages)
Specifications of BSP89
Transistor Polarity
N Channel
Continuous Drain Current Id
360mA
Drain Source Voltage Vds
240V
On Resistance Rds(on)
6ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
1.4V
Rohs Compliant
Yes
Package
SOT-223
Vds (max)
240.0 V
Rds (on) (max) (@10v)
6,000.0 mOhm
Rds (on) (max) (@4.5v)
7,500.0 mOhm
Rds (on) (max) (@2.5v)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP89
Manufacturer:
PHL/INF
Quantity:
20 000
Company:
Part Number:
BSP89 H6327
Manufacturer:
INFINEON
Quantity:
34 000
Company:
Part Number:
BSP89115
Manufacturer:
NXP Semiconductors
Quantity:
119 928
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=108µA
=240V, V
=240V, V
=0, I
=20V, V
=4.5V, I
=10V, I
2
D
cooling area
=250µA
D
D
DS
=0.35A
GS
GS
=0.32A
=0
=0, T
=0, T
j
j
=25°C
=150°C
1)
GS
= V
j
DS
= 25 °C, unless otherwise specified
Rev. 1.21
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
240
0.8
-
-
-
-
-
-
-
-
Values
Values
typ.
typ.
1.4
4.9
4.2
-
-
-
-
-
-
-
max.
max.
115
1.8
0.1
7.5
70
10
10
25
2006-09-27
6
-
BSP89
Unit
V
µA
nA
W
Unit
K/W