BSP89 Infineon Technologies, BSP89 Datasheet - Page 2

• Manufacturer Part Number: BSP89
• Description: MOSFET, N, LOGIC, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP89

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 360mA
• Drain Source Voltage Vds: 240V
• On Resistance Rds(on): 6ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 1.4V
• Rohs Compliant: Yes
• Package: SOT-223
• Vds (max): 240.0 V
• Rds (on) (max) (@10v): 6,000.0 mOhm
• Rds (on) (max) (@4.5v): 7,500.0 mOhm
• Rds (on) (max) (@2.5v): -

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=108µA
=240V, V
=240V, V
=0, I
=20V, V
=4.5V, I
=10V, I
2
D
cooling area
=250µA
D
D
DS
=0.35A
GS
GS
=0.32A
=0
=0, T
=0, T
j
j
=25°C
=150°C
1)
GS
= V
j
DS
= 25 °C, unless otherwise specified
Rev. 1.21
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
240
0.8
-
-
-
-
-
-
-
-
Values
Values
typ.
typ.
1.4
4.9
4.2
-
-
-
-
-
-
-
max.
max.
115
1.8
0.1
7.5
70
10
10
25
2006-09-27
6
-
BSP89
Unit
V
µA
nA
W
Unit
K/W