D2019UK SEMELAB, D2019UK Datasheet
D2019UK
Manufacturer Part Number
D2019UK
Description
MOSFET,RF,N CH,SE,28V,2.5W,1GHZ,SO8
Manufacturer
SEMELAB
Datasheet
1.D2019UK.pdf
(2 pages)
Specifications of D2019UK
Transistor Type
RF FET
Drain Source Voltage Vds
65V
Continuous Drain Current Id
1A
Power Dissipation Max
17.5W
Operating Frequency Range
50MHz To 2GHz
Rf Transistor Case
SOIC
No. Of Pi
RoHS Compliant
No. Of Pins
8
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D2019UK
Manufacturer:
SEMELAB
Quantity:
20 000
MECHANICAL DATA
ABSOLUTE MAXIMUM RATINGS
P
BV
BV
I
T
T
Semelab plc.
D(sat)
stg
j
D
L
DSS
GSS
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
D
K
J
8
7
6
5
Dim.
C
D
G
H
M
N
A
B
E
F
K
P
J
L
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
0.20
2.18
4.57
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
mm
45°
0°
7°
SO8 PACKAGE
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
E
A
F
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
±0.08
±0.08
-0.00
Max.
Max.
Max.
Max.
Min.
Min.
Tol.
H
G
1
2
3
4
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
0.008
0.086
0.180
C
45°
M
0°
7°
B
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
±0.003
±0.003
-0.000
Max.
Max.
Max.
Max.
Min.
Min.
Tol.
ROHS COMPLIANT
N
(T
case
P
= 25°C unless otherwise stated)
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
MULTI-PURPOSE SILICON
GOLD METALLISED
2.5W – 28V – 1GHz
SINGLE ENDED
DMOS RF FET
METAL GATE RF SILICON FET
rss
–65 to 150°C
17.5W
200°C
±20V
D2019UK
65V
1A
TetraFET
Prelim. 9/95
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D2019UK Summary of contents
Page 1
... Min. 7° Max. 0.008 ±0.003 0.086 Max. 0.180 ±0.003 (T = 25°C unless otherwise stated) case D2019UK METAL GATE RF SILICON FET GOLD METALLISED DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED rss 17.5W 65V ±20V –65 to 150°C 200°C TetraFET 1A Prelim ...
Page 2
... Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612 25°C unless otherwise stated) case Test Conditions 10mA 28V 20V 10mA 10V 28V 1GHz – 1MHz 28V 1MHz 28V 1MHz D2019UK Min. Typ. Max. Unit 0. 20:1 — 0.5 pF Max. 10° Prelim. 9/95 A ...