SIA444DJT-T1-GE3 Vishay, SIA444DJT-T1-GE3 Datasheet
SIA444DJT-T1-GE3
Specifications of SIA444DJT-T1-GE3
Related parts for SIA444DJT-T1-GE3
SIA444DJT-T1-GE3 Summary of contents
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... Small Footprint Area - Ultra-Thin 0.6 mm height • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter • High Frequency Switching Marking Code Part # code Lot Traceability and Date code Ordering Information: SiA444DJT-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted) A Symbol ° ° ...
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... SiA444DJT Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... 400 200 1.8 1.6 1.4 1 1.0 0.8 0 This document is subject to change without notice. SiA444DJT Vishay Siliconix = 25 ° 125 ° ° 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...
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... SiA444DJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 10 = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.9 1.8 1.7 1.6 1.5 1.4 1 250 μA D 1.2 1.1 1.0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product 0 ...
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... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper This document is subject to change without notice. SiA444DJT Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating www.vishay.com 5 www ...
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... SiA444DJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...