SKM200GB126D SEMIKRON, SKM200GB126D Datasheet - Page 2

• Manufacturer Part Number: SKM200GB126D
• Description: IGBT MODULE, DUAL, 1200V
• Manufacturer: SEMIKRON

Specifications of SKM200GB126D

• Transistor Polarity: N Channel
• Dc Collector Current: 260A
• Collector Emitter Voltage Vces: 2.15V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case: RoHS Compliant
• Family/system: SEMITRANS
• Voltage (v): 1200
• Current (a): 150
• Chip-type: IGBT 3 (Trench)
• Case: SEMITRANS 3

SKM 200GB126D ...
Trench IGBT Modules
SKM 200GB126D
SKM 200GAL126D
Features
Typical Applications*
2
SEMITRANS
GB
GAL
®
3
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Characteristics
Symbol
Inverse diode
FWD
Module
11-09-2006 SEN
Conditions
min.
typ.
© by SEMIKRON
max.
Units