SKM300GB12E4 SEMIKRON, SKM300GB12E4 Datasheet
SKM300GB12E4
Specifications of SKM300GB12E4
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SKM300GB12E4 Summary of contents
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... SKM300GB12E4 ® SEMITRANS 3 IGBT4 Modules SKM300GB12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw kHz Remarks • ...
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... SKM300GB12E4 ® SEMITRANS 3 IGBT4 Modules SKM300GB12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw kHz Remarks • ...
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... SKM300GB12E4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 16.06.2009 = ...
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... SKM300GB12E4 Fig. 7: Typ. switching times vs. I Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: CAL diode forward characteristic Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 2 – 16.06.2009 G © by SEMIKRON ...
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... SKM300GB12E4 Semitrans 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 16.06.2009 5 ...