SQD15N06-42L-GE3 Vishay, SQD15N06-42L-GE3 Datasheet

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SQD15N06-42L-GE3

Manufacturer Part Number
SQD15N06-42L-GE3
Description
MOSFET,N CH,W DIODE,60V,15A,TO-252
Manufacturer
Vishay
Datasheet

Specifications of SQD15N06-42L-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
15A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.037ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
33W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.042 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQD15N06-42L-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
Document Number: 68880
S11-0253-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
G
DS(on)
DS(on)
(A)
TO-252
Top View
(V)
D
() at V
() at V
S
GS
GS
Drain Connected to Tab
= 10 V
= 4.5 V
b
b
N-Channel 60 V (D-S) 175 °C MOSFET
d
G
N-Channel MOSFET
This datasheet is subject to change without notice.
a
Single
0.042
0.060
C
60
15
= 25 °C, unless otherwise noted)
D
S
PCB Mount
T
T
T
L = 0.1 mH
T
Automotive
C
C
C
C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
a
c
TO-252
SQD15N06-42L-GE3
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• AEC-Q101 Qualified
• Package with Low Thermal Resistance
• Compliant to RoHS Directive 2002/95/EC
Definition
SYMBOL
SYMBOL
T
R
R
J
V
V
I
E
I
P
, T
thJC
DM
thJA
I
I
AS
DS
GS
AS
D
S
D
stg
®
Power MOSFET
d
- 55 to + 175
LIMIT
LIMIT
± 20
4.5
50
60
15
10
15
50
18
16
33
11
SQD15N06-42L
www.vishay.com/doc?91000
Vishay Siliconix
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
V
A
1

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SQD15N06-42L-GE3 Summary of contents

Page 1

... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Automotive FEATURES • Halogen-free According to IEC 61249-2-21 60 Definition 0.042 ® • TrenchFET 0.060 • AEC-Q101 Qualified 15 • Package with Low Thermal Resistance Single • Compliant to RoHS Directive 2002/95/ N-Channel MOSFET TO-252 SQD15N06-42L-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 ° ...

Page 2

... SQD15N06-42L Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance b Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... 0. ° ° 125 °C C 0.04 0. This datasheet is subject to change without notice. SQD15N06-42L Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) ...

Page 4

... SQD15N06-42L Vishay Siliconix TYPICAL CHARACTERISTICS (T 2 2.1 1 1.3 0.9 0 100 T - Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.5 0.4 0.3 0 ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH ° ...

Page 5

... C Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( minimum V at which R is specified GS GS DS(on) Safe Operating Area - Square Wave Pulse Duration (s) This datasheet is subject to change without notice. SQD15N06-42L Vishay Siliconix 100 µ 100 100 10 100 1000 www.vishay.com www.vishay.com/doc?91000 5 ...

Page 6

... SQD15N06-42L Vishay Siliconix THERMAL RATINGS ( °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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