SQD25N06-22L-GE3 Vishay, SQD25N06-22L-GE3 Datasheet - Page 5
SQD25N06-22L-GE3
Manufacturer Part Number
SQD25N06-22L-GE3
Description
MOSFET,N CH,W DIODE,60V,25A,TO-252
Manufacturer
Vishay
Datasheet
1.SQD25N06-22L-GE3.pdf
(7 pages)
Specifications of SQD25N06-22L-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
25A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.018ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
62W
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQD25N06-22L-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
THERMAL RATINGS (T
Document Number: 65360
S10-1850-Rev. B, 06-Sep-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
-3
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
100
0.1
10
10
1
0.01
-2
Single Pulse
T
* V
C
= 25 °C
Limited by R
GS
> minimum V
V
Square Wave Pulse Duration (s)
0.1
DS
Safe Operating Area
10
- Drain-to-Source Voltage (V)
-1
DS(on)
I
DM
GS
*
Limited
at which R
I
D
1
Limited
BVDSS Limited
DS(on)
1
10
is specified
100 µs
1 ms
10 ms
100 ms
1 s, 10 s, DC
100
10
SQD25N06-22L
100
Vishay Siliconix
www.vishay.com
1000
5