SQD40N04-10A-GE3 Vishay, SQD40N04-10A-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD40N04-10A-GE3
• Description: MOSFET,N CH,W DIODE,40V,42A,TO-252
• Manufacturer: Vishay

Specifications of SQD40N04-10A-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 42A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 0.006ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 71W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS (T
Document Number: 68847
S10-1684-Rev. A, 02-Aug-10
3000
2500
2000
1500
1000
500
120
100
100
80
60
40
20
80
60
40
20
0
0
0
0
0
0
T
C
C
= 25 °C
rss
V
5
GS
C
C
T
oss
iss
C
= 10 V thru 6 V
4
8
V
V
= - 55 °C
10
DS
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
GS
I
D
Capacitance
15
- Drain Current (A)
= 5 V
16
8
T
20
C
= 125 °C
V
GS
12
24
25
= 4 V
A
= 25 °C, unless otherwise noted)
30
16
32
35
40
20
40
0.05
0.04
0.03
0.02
0.01
100
80
60
40
20
10
0
0
8
6
4
2
0
0
0
0
T
C
I
T
D
C
= 125 °C
= 40 A
= 25 °C
On-Resistance vs. Drain Current
20
10
2
V
V
GS
GS
Transfer Characteristics
Q
= 4.5 V
g
- Gate-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
40
20
4
T
V
SQD40N04-10A
C
DS
= - 55 °C
= 20 V
V
Vishay Siliconix
GS
60
30
6
= 10 V
www.vishay.com
80
40
8
100
10
50
3