SQD45P03-12-GE3 Vishay, SQD45P03-12-GE3 Datasheet

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SQD45P03-12-GE3

Manufacturer Part Number
SQD45P03-12-GE3
Description
MOSFET,P CH,W DIODE,30V,50A,TO-252
Manufacturer
Vishay
Datasheet

Specifications of SQD45P03-12-GE3

Transistor Polarity
P Channel
Continuous Drain Current Id
-50A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
0.008ohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
-20V
Power
RoHS Compliant
Power Dissipation Pd
71W
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQD45P03-12-GE3
Manufacturer:
VISHAY
Quantity:
9 203
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
Document Number: 65549
S10-1862-Rev. B, 06-Sep-10
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
DS(on)
G
(A)
Top View
TO-252
(V)
D
(Ω) at V
(Ω) at V
S
GS
GS
Drain Connected to Tab
= - 10 V
= - 4.5 V
b
b
P-Channel 30 V (D-S) 175 °C MOSFET
G
P-Channel MOSFET
a
Single
0.012
0.029
C
- 30
- 50
D
S
= 25 °C, unless otherwise noted)
PCB Mount
L = 0.1 mH
T
T
T
Automotive
T
C
C
C
C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
a
c
TO-252
SQD45P03-12-GE3
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Package with Low Thermal Resistance
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualified
• Find out more about Vishay’s Automotive Grade Product
Definition
Requirements at:
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
thJC
DM
thJA
I
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
www.vishay.com/applications
d
- 55 to + 175
LIMIT
LIMIT
- 200
± 20
- 30
- 50
- 34
- 50
- 31
2.1
48
71
23
50
SQD45P03-12
Vishay Siliconix
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
A
V
1

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SQD45P03-12-GE3 Summary of contents

Page 1

... TrenchFET 0.029 • Package with Low Thermal Resistance - 50 • Compliant to RoHS Directive 2002/95/EC Single • AEC-Q101 Qualified • Find out more about Vishay’s Automotive Grade Product S Requirements at: D P-Channel MOSFET TO-252 SQD45P03-12-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 ° ...

Page 2

... SQD45P03-12 Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... T - Junction Temperature (°C) J On-Resistance vs. Junction Temperature Document Number: 65549 S10-1862-Rev. B, 06-Sep- °C, unless otherwise noted 125 ° 100 125 150 175 SQD45P03-12 Vishay Siliconix 100 ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0. 0.03 0.02 0.01 ...

Page 4

... SQD45P03-12 Vishay Siliconix TYPICAL CHARACTERISTICS (T 0.10 0.08 0.06 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 5000 4000 C iss 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Capacitance www.vishay.com °C, unless otherwise noted 150 ° ° 1.1 0.8 0.5 0 ...

Page 5

... Document Number: 65549 S10-1862-Rev. B, 06-Sep-10 I Limited 100 DM Limited DS(on) I Limited 0 °C C Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area - Square Wave Pulse Duration (s) SQD45P03-12 Vishay Siliconix 100 µ 100 100 10 100 1000 www.vishay.com 5 ...

Page 6

... SQD45P03-12 Vishay Siliconix THERMAL RATINGS ( °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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