SQD50N03-06P-GE3 Vishay, SQD50N03-06P-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD50N03-06P-GE3
• Description: MOSFET,N CH,W DIODE,30V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50N03-06P-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0047ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 83W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0065 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 120 V
• Continuous Drain Current: 84 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

SQD50N03-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.001
0.01
100
- 0.3
- 0.7
- 1.1
- 1.5
0.1
10
0.5
0.1
10
1
8
6
4
2
0
0.0
- 50 - 25
0
Source Drain Diode Forward Voltage
I
V
0.2
D
T
DS
10
= 50 A
J
= 150 °C
= 15 V
V
0
SD
T
J
Q
- Source-to-Drain Voltage (V)
= 25 °C
g
0.4
Threshold Voltage
T
20
25
- Total Gate Charge (nC)
J
- Temperature (°C)
Gate Charge
50
0.6
30
75
I
0.8
100
D
40
A
= 250 μA
T
= 25 °C, unless otherwise noted)
J
125
= - 50 °C
I
D
1.0
50
= 5 mA
150
1.2
175
60
0.05
0.04
0.03
0.02
0.01
0.00
2.5
2.0
1.5
1.0
0.5
40
38
36
34
32
30
Drain Source Breakdown vs. Junction Temperature
- 50 - 25
- 50 - 25
0
On-Resistance vs. Gate-to-Source Voltage
I
D
On-Resistance vs. Junction Temperature
= 20 A
I
D
T
= 10 mA
2
J
V
0
0
T
T
= 25 °C
GS
J
J
- Junction Temperature (°C)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
25
4
50
50
S10-2210-Rev. C, 27-Sep-10
75
75
Document Number: 68634
6
100
100
T
J
= 150 °C
V
GS
125
125
V
= 10 V
GS
8
= 4.5 V
150
150
175
175
10