SQD50N06-09L-GE3 Vishay, SQD50N06-09L-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD50N06-09L-GE3
• Description: MOSFET,N CH,W DIODE,60V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50N06-09L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.0071ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS (T
Document Number: 68901
S10-2107-Rev. A, 27-Sep-10
0.025
0.020
0.015
0.010
0.005
100
80
60
40
20
10
0
8
6
4
2
0
0
0
0
0
V
GS
On-Resistance vs. Drain Current
= 10 V thru 5 V
20
4
1
T
V
V
V
C
Transfer Characteristics
DS
GS
GS
Output Characteristics
= 125 °C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
= 4 V
T
I
C
D
V
= 25 °C
- Drain Current (A)
40
GS
8
2
= 2 V
V
V
12
GS
60
GS
3
T
= 4.5 V
= 3 V
C
A
= - 55 °C
V
= 25 °C, unless otherwise noted)
GS
16
80
4
= 10 V
100
20
5
4000
3000
2000
1000
120
100
100
80
60
40
20
80
60
40
20
0
0
0
0
0
0
T
T
C
T
C
C
rss
C
= 125 °C
= 25 °C
= 25 °C
10
T
10
C
2
V
V
= - 55 °C
GS
C
C
DS
Transfer Characteristics
oss
iss
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
C
I
20
D
= 125 °C
- Drain Current (A)
20
T
Capacitance
4
SQD50N06-09L
C
= - 55 °C
30
Vishay Siliconix
30
6
40
www.vishay.com
40
8
50
50
10
60
3