SQM40N10-30-GE3 Vishay, SQM40N10-30-GE3 Datasheet - Page 3
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SQM40N10-30-GE3
Manufacturer Part Number
SQM40N10-30-GE3
Description
MOSFET,N CH,W DIODE,100V,40A,TO-263
Manufacturer
Vishay
Datasheet
1.SQM40N10-30-GE3.pdf
(7 pages)
Specifications of SQM40N10-30-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.023ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
107W
Rohs Compliant
Yes
Lead Free Status / Rohs Status
Details
TYPICAL CHARACTERISTICS (T
Document Number: 64716
S10-2103-Rev. B, 27-Sep-10
5000
4000
3000
2000
1000
125
100
75
60
45
30
15
75
50
25
0
0
0
0
0
0
T
C
C
= 25 °C
oss
T
C
20
12
2
= - 55 °C
V
V
C
DS
DS
rss
Output Characteristics
C
V
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
Transconductance
iss
GS
I
C
D
= 125 °C
Capacitance
= 10 V thru 6 V
- Drain Current (A)
40
24
4
V
GS
60
36
6
= 5 V
V
A
GS
= 25 °C, unless otherwise noted)
48
80
= 4 V
8
100
10
60
0.10
0.08
0.06
0.04
0.02
75
60
45
30
15
10
0
8
6
4
2
0
0
0
0
0
I
T
D
On-Resistance vs. Drain Current
C
10
15
= 40 A
2
= 125 °C
V
T
GS
Transfer Characteristics
C
Q
= 25 °C
- Gate-to-Source Voltage (V)
g
V
I
- Total Gate Charge (nC)
D
GS
V
- Drain Current (A)
Gate Charge
DS
20
30
4
= 6 V
= 50 V
SQM40N10-30
Vishay Siliconix
T
C
= - 55 °C
30
45
6
V
www.vishay.com
GS
40
60
8
= 10 V
10
50
75
3