SQM85N15-19-GE3 Vishay, SQM85N15-19-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQM85N15-19-GE3
• Description: MOSFET,N CH,W DIODE,150V,85A,TO-263
• Manufacturer: Vishay

Specifications of SQM85N15-19-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 0.016ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 375W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.019 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 85 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

THERMAL RATINGS (T
Document Number: 68668
S10-2105-Rev. C, 27-Sep-10
0.0001
0.001
0.01
0.1
1
10
-4
10
A
-3
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.01
100
0.1
10
1
0.01
10
-2
* V
GS
T
Single Pulse
C
= 25 °C
0.1
minimum V
V
DS
I
Square Wave Pulse Duration (s)
Limited by
DM
R
Safe Operating Area
- Drain-to-Source Voltage (V)
DS(on)
Limited
10
-1
1
GS
*
at which R
BVDSS Limited
10
DS(on)
1
is specified
100
100 µs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
1000
10
SQM85N15-19
Vishay Siliconix
100
www.vishay.com
1000
5