SQR40N10-25-GE3 Vishay, SQR40N10-25-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQR40N10-25-GE3
• Description: MOSFET,N CH,W DIODE,100V,40A,DPAK
• Manufacturer: Vishay

Specifications of SQR40N10-25-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.019ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes

THERMAL RATINGS (T
Document Number: 69060
S10-2455-Rev. C, 08-Nov-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
A
-3
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.01
100
0.1
10
1
0.01
10
* V
-2
GS
T
Single Pulse
C
= 25 °C
minimum V
V
0.1
DS
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
Limited by
Safe Operating Area
R
DS(on)
10
I
GS
-1
DM
*
at which R
Limited
1
I
D
Limited
DS(on)
BVDSS Limited
10
1
is specified
100
100 µs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
10
SQR40N10-25
Vishay Siliconix
100
www.vishay.com
1000
5