SQR40N10-25-GE3 Vishay, SQR40N10-25-GE3 Datasheet - Page 5
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SQR40N10-25-GE3
Manufacturer Part Number
SQR40N10-25-GE3
Description
MOSFET,N CH,W DIODE,100V,40A,DPAK
Manufacturer
Vishay
Datasheet
1.SQR40N10-25-GE3.pdf
(7 pages)
Specifications of SQR40N10-25-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.019ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
136W
Rohs Compliant
Yes
THERMAL RATINGS (T
Document Number: 69060
S10-2455-Rev. C, 08-Nov-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
A
-3
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.01
100
0.1
10
1
0.01
10
* V
-2
GS
T
Single Pulse
C
= 25 °C
minimum V
V
0.1
DS
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
Limited by
Safe Operating Area
R
DS(on)
10
I
GS
-1
DM
*
at which R
Limited
1
I
D
Limited
DS(on)
BVDSS Limited
10
1
is specified
100
100 µs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
10
SQR40N10-25
Vishay Siliconix
100
www.vishay.com
1000
5