VS-GA200SA60UP Vishay, VS-GA200SA60UP Datasheet - Page 5

• Manufacturer Part Number: VS-GA200SA60UP
• Description: IGBT, SOT-227
• Manufacturer: Vishay

Specifications of VS-GA200SA60UP

• Transistor Type: IGBT
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 1.6V
• Power Dissipation Max: 500W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 500W
• Rohs Compliant: Yes

www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
30000
25000
20000
15000
10000
5000
60
50
40
30
20
10
0
0
0

V
V
T
Fig. 7 - Typical Capacitance vs.
I
1
J
C
CC
GE
= 25
= 480V
= 15V
= 200A

10
C
C
C
R
V
ies

oes

res
G
Collector-to-Emitter Voltage
CE
R
°
G

, Gate Resistance (Ohm)
V
C
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
, Gate Resistance (Ω)
GE
ies
res
oes
20
=
=
=
=
0V,
C
C
C
ge
gc
ce
30
+ C
+ C
10
f = 1MHz
gc ,
gc
40
C
ce
SHORTED
50
100
60
100
10
20
16
12
1
Fig. 10 - Typical Switching Losses vs.
8
4
0
-60 -40 -20
0

R
V
V

V
I
GE
CC
G
CC
C
Fig. 8 - Typical Gate Charge vs.
= 15V
= 480V
= Ohm
= 400V
= 110A
T , Junction Temperature ( C )
Junction Temperature
2.0
Q , Total Gate Charge (nC)
J
200
G
Ω
0
GA200SA60U
Gate-to-Emitter Voltage
20
40
400
60
80 100 120 140 160
600

I
I =

I =

I =
C
C
C
C
°
=
400
200
100
350
A
A
A
A
5
800