VS-GB75YF120UT Vishay, VS-GB75YF120UT Datasheet - Page 4

• Manufacturer Part Number: VS-GB75YF120UT
• Description: IGBT,4 PACK,1200V,75A,ECONO2
• Manufacturer: Vishay

Specifications of VS-GB75YF120UT

• Module Configuration: Quad
• Transistor Polarity: NPN
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 3.8V
• Power Dissipation Max: 480W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case: RoHS Compliant
• Transistor Case Style: Module
• No. Of Pins: 33
• Rohs Compliant: Yes

GB75YF120UT
Vishay High Power Products
www.vishay.com
4
160
140
120
100
160
140
120
100
150
140
130
120
110
100
80
60
40
20
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
0
Fig. 7 - Typical Diode Forward Characteristics
Fig. 5 - Typical IGBT Output Characteristics
Fig. 6 - Typical IGBT Output Characteristics
0.0
0
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
Tj = 25°C
Tj = 125°C
1
1
1.0
T
T
J
2
J
= 125 °C; t
= 25 °C; t
2
2.0
t
3
p
V
V
CE
= 500 μs
V
CE
F
3
4
(V)
(V)
(V)
p
p
3.0
= 500 μs
= 500 μs
5
4
For technical questions, contact:
6
4.0
5
7
5.0
6
8
IGBT Fourpack Module, 75 A
[e-mail]
300
250
200
150
100
20
18
16
14
12
10
50
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
7
Fig. 10 - Typical Transfer Characteristics
7
5
6
9
9
Fig. 8 - Typical V
Fig. 9 - Typical V
V
CE
7
11
= 20 V; t
11
T J = 25°C
T J = 125°C
T
T
J
J
V
V
V
= 125 °C
8
GE
= 25 °C
GE
GE
13
13
(V)
(V)
p
(V)
= 500 μs
9
CE
CE
15
15
vs. V
vs. V
Document Number: 93172
10
I CE = 75A
I CE = 50A
I CE = 25A
I CE = 75A
I CE = 50A
I CE = 25A
GE
GE
17
17
Revision: 13-Jan-10
11
19
12
19