10WT10FNTRL Vishay, 10WT10FNTRL Datasheet - Page 4

• Manufacturer Part Number: 10WT10FNTRL
• Description: Schottky - D-PAK-e3
• Manufacturer: Vishay

Specifications of 10WT10FNTRL

• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 10 A
• Max Surge Current: 610 A
• Configuration: Single Dual Anode
• Forward Voltage Drop: 0.89 V at 20 A
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK (TO-252AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VS-10UT10, VS-10WT10FN
Vishay Semiconductors
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
180
175
170
165
160
155
150
145
Fig. 5 - Maximum Allowable Case Temperature vs.
= Inverse power loss = V
0
Square wave (D = 0.50)
80 % rated V
See note (1)
I
F(AV)
2
C
Average Forward Current (A)
Average Forward Current
= T
4
J
R
- (Pd + Pd
applied
6
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
F(AV)
8
R1
DC
x V
REV
x I
10
FM
) x R
R
(1 - D); I
at (I
12
1000
thJC
100
10
F(AV)
Fig. 7 - Maximum Non-Repetitive Surge Current
;
10
14
High Performance Schottky
R
/D) (see fig. 6);
at V
t
p
- Square Wave Pulse Duration (µs)
16
Generation 5.0, 10 A
R1
= 80 % rated V
100
R
1000
10
8
6
4
2
0
[e-mail]
0
Fig. 6 - Forward Power Loss Characteristics
I
10 000
F(AV)
180°
120°
90°
60°
30°
3
-
Average Forward Current (A)
6
DC
9
Document Number: 94647
RMS limit
12
Revision: 04-Jan-11
15