80RIA120PBF Vishay, 80RIA120PBF Datasheet - Page 4
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80RIA120PBF
Manufacturer Part Number
80RIA120PBF
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),80A I(T),TO-209varM12
Manufacturer
Vishay
Datasheet
1.80RIA40.pdf
(7 pages)
Specifications of 80RIA120PBF
Breakover Current Ibo Max
1990 A
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
15 mA
Forward Voltage Drop
1.6 V
Gate Trigger Voltage (vgt)
2.5 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
120 mA
Holding Current (ih Max)
200 mA
Mounting Style
Stud
Package / Case
TO-94
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance R
www.vishay.com
4
R
CONDUCTION ANGLE
thJC
130
120
110
100
CONDUCTION
90
80
180°
120°
90°
60°
30°
Fig. 1 - Current Ratings Characteristics
0
10 20 30 40 50 60 70 80 90
Average On-s tate Current (A)
80RIA S eries
R
30°
thJC
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
(DC) = 0.30 K/W
120
110
100
60°
90
80
70
60
50
40
30
20
10
For technical questions within your region, please contact one of the following:
0
SINUSOIDAL CONDUCTION
0
90°
Conduc tion Angle
10
120°
Average On-state Current (A)
RMS Limit
180°
120°
90°
60°
30°
20
180°
0.042
0.050
0.064
0.095
0.164
30
Fig. 3 - On-State Power Loss Characteristics
40
Phase Control Thyristors
Conduction Angle
50
(Stud Version), 80 A
80RIA S eries
T = 125°C
J
60
thJC
70
RECTANGULAR CONDUCTION
when devices operate at different conduction angles than DC
80
0
Maximum Allowable Ambient T emperature (°C)
25
0.030
0.052
0.070
0.100
0.165
50
DiodesEurope@vishay.com
130
120
110
100
90
80
70
0
Fig. 2 - Current Ratings Characteristics
75
20
Average On-state Current (A)
30°
40
100
80RIA S eries
R
60°
thJC
90°
60
(DC) = 0.30 K/W
TEST CONDITIONS
125
120°
T
J
Conduction Period
80
= T
180°
J
100
Document Number: 94392
maximum
DC
120 140
Revision: 17-Sep-10
UNITS
K/W