81RIA120PBF Vishay, 81RIA120PBF Datasheet - Page 5

• Manufacturer Part Number: 81RIA120PBF
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),80A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of 81RIA120PBF

• Breakover Current Ibo Max: 1990 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 2.5 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94392
Revision: 17-Sep-10
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
1800
1600
1400
1200
1000
800
1
At Any Rated Load Condition And With
Rated V
80R IA S eries
RRM
[e-mail], [e-mail],
180
160
140
120
100
Applied Following Surge.
80
60
40
20
For technical questions within your region, please contact one of the following:
0
0
10
RMS Limit
at 60 Hz 0.0083 s
Initial T
at 50 Hz 0.0100 s
20
Average On-state Current (A)
180°
120°
DC
90°
60°
30°
J
40
= 125°C
10000
1000
80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Fig. 7 - On-State Voltage Drop Characteristics
60
100
Fig. 4 - On-State Power Loss Characteristics
10
1
100
0.5
Phase Control Thyristors
80
Conduc tion Period
Instantaneous On-state Voltage (V)
1
(Stud Version), 80 A
80RIA S eries
T = 125°C
J
100 120 140
1.5
2
T = 25°C
T = 125°C
J
J
2.5
0
Maximum Allowable Ambient T emperature (°C)
3
80RIA Series
3.5
25
4
50
4.5
Fig. 6 - Maximum Non-Repetitive Surge Current
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
[e-mail]
900
800
700
0.01
5
Of Conduction May Not Be Maintained.
Maximum Non Repetitive Surge Current
75
80RIA S eries
Versus Pulse Train Duration. Control
Puls e T rain Duration (s)
100
Vishay Semiconductors
125
No Voltage Reapplied
Rated V
0.1
Initial T = 125°C
RRM
Reapplied
J
www.vishay.com
1
5