B380C800DM-E3/45 Vishay, B380C800DM-E3/45 Datasheet - Page 3

• Manufacturer Part Number: B380C800DM-E3/45
• Description: 0.9A,600V,DIP,BRIDGE
• Manufacturer: Vishay

Specifications of B380C800DM-E3/45

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 900mA
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-EDIP (0.300", 7.62mm)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 600 V
• Maximum Rms Reverse Voltage: 380 V
• Max Surge Current: 45 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 10 uA
• Maximum Operating Temperature: + 125 C
• Length: 8.51 mm
• Width: 6.5 mm
• Height: 3.3 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 600V
• Rms Voltage (max): 380V
• Peak Non-repetitive Surge Current (max): 45A
• Avg. Forward Curr (max): 0.9@Ta=45CA
• Rev Curr: 10uA
• Forward Voltage: 1V
• Package Type: Case DFM
• Operating Temp Range: -40C to 125C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88533
Revision: 29-May-08
Figure 3. Maximum Non-Repetitive Peak Forward Surge
0.01
0.1
50
40
30
20
10
10
Figure 4. Typical Forward Characteristics Per Diode
0
1
0.4
0
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
Instantaneous Forward Voltage (V)
0.6
Number of Cycles at 50 Hz
Current Per Diode
1.0 Cycle
0.8
0.045 (1.14)
0.035 (0.89)
[e-mail], [e-mail], [e-mail]
0.130 (3.30)
0.120 (3.05)
For technical questions within your region, please contact one of the following:
10
T
10 ms Single Sine-Wave
J
0.023 (0.58)
0.018 (0.46)
= 125 °C
1.0
1.2
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
100
1.4
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.075 (1.90)
0.055 (1.39)
0.080 (2.03)
0.050 (1.27)
B40C800DM thru B380C800DM
0.185 (4.69)
0.150 (3.81)
Figure 5. Typical Reverse Leakage Characteristics Per Diode
0.315 (8.00)
0.285 (7.24)
0.01
100
0.1
10
10
1
1
Figure 6. Typical Junction Capacitance Per Diode
1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
T
Reverse Voltage (V)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
0.013 (0.33)
J
T
= 25 °C
J
40
= 100 °C
10
60
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
80
www.vishay.com
100
100
3