BYG10G-E3/TR3 Vishay, BYG10G-E3/TR3 Datasheet - Page 3

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BYG10G-E3/TR3

Manufacturer Part Number
BYG10G-E3/TR3
Description
RECTIFIER DIODE,400V V(RRM),DO-214AC / SMA
Manufacturer
Vishay
Datasheet

Specifications of BYG10G-E3/TR3

Voltage - Forward (vf) (max) @ If
1.15V @ 1.5A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
1µA @ 400V
Diode Type
Avalanche
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4µs
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.15 V
Recovery Time
4000 ns
Forward Continuous Current
1.5 A
Max Surge Current
30 A
Reverse Current Ir
1 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYG10G-E3/TR3
Manufacturer:
VISHAY/威世
Quantity:
20 000
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88957
Revision: 03-Jun-09
Figure 2. Max. Average Forward Current vs. Ambient Temperature
A
= 25 °C unless otherwise noted)
0.001
1000
0.01
100
100
1.4
0.4
0.2
1.6
1.2
1.0
0.8
0.6
0.1
10
Figure 3. Reverse Current vs. Junction Temperature
10
0
1
1
25
Figure 1. Forward Current vs. Forward Voltage
0
0
20
R
R
V
T
0.5
θJA
θJA
R
J
50
= 150 °C
= V
≤ 125 K/W
≤ 150 K/W
40
Junction Temperature (°C)
Ambient Temperature (°C)
RRM
V
Half Sine-Wave
R
R
θJA
1.0
= V
≤ 25 K/W
60
RRM
75
T
J
= 25 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
For technical questions within your region, please contact one of the following:
1.5
80
100
100
2.0
120
125
2.5
140
160
150
3.0
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
5000
4000
3000
2000
1000
Figure 6. Reverse Recovery Time vs. Forward Current
400
350
300
250
200
150
100
50
30
25
20
15
10
5
0
0
0
Figure 5. Diode Capacitance vs. Reverse Voltage
0.1
PDD-Europe@vishay.com
25
0
Vishay General Semiconductor
V
R
= V
0.2
50
BYG10D thru BYG10Y
RRM
Junction Temperature (°C)
T
Forward Current (A)
Reverse Voltage (V)
A
1
= 100 °C
0.4
75
P
R
- Limit at 80 % V
T
I
R
A
= 0.5 A, i
P
= 25 °C
100
R
0.6
- Limit at 100 % V
10
T
A
= 50 °C
R
T
= 0.125 A
R
T
A
f = 1 MHz
A
125
= 75 °C
0.8
= 125 °C
www.vishay.com
R
150
100
1.0
3

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