BYM11-200-E3/96 Vishay, BYM11-200-E3/96 Datasheet - Page 3

1A,200V,150NS,SUPERECT MELF

BYM11-200-E3/96

Manufacturer Part Number
BYM11-200-E3/96
Description
1A,200V,150NS,SUPERECT MELF
Manufacturer
Vishay
Datasheets

Specifications of BYM11-200-E3/96

Voltage - Forward (vf) (max) @ If
1.3V @ 1A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
150ns
Mounting Type
Surface Mount
Package / Case
DO-213AB, Melf
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
1A
Forward Voltage Vf Max
1.3V
Reverse Recovery Time Trr Max
150ns
Forward Surge Current Ifsm Max
30A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYM11-200-E3/96
Manufacturer:
Vishay Semiconductors
Quantity:
12 000
Part Number:
BYM11-200-E3/96
Manufacturer:
VISHAY
Quantity:
10 000
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88547
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
A
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
= 25 °C unless otherwise noted)
1.25
1.00
0.75
0.50
0.25
0.01
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
30
25
20
15
10
10
0
0
1
25
0.4
1
Fig. 1 - Forward Current Derating Curve
0.6
50
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
Terminal Temperature (°C)
0.8
75
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
T
8.3 ms Single Half Sine-Wave
For technical questions within your region, please contact one of the following:
100
BYM11-50 thru BYM11-1000, RGL41A thru RGL41M
1.0
J
10
T
Pulse Width = 300 µs
1 % Duty Cycle
= T
J
= 25 °C
J
Max.
125
1.2
Resistive or
Inductive Load
150
1.4
This datasheet is subject to change without notice.
175
100
1.6
0.01
100
100
0.1
0.1
10
10
10
1
1
1
0.01
0
1
DiodesEurope@vishay.com
Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
20
0.1
Mounted on 0.20" x 0.27" (5 mm x 7 mm)
Copper Pad Areas
t - Pulse Duration (s)
Reverse Voltage (V)
40
10
1
T
T
J
J
60
= 25 °C
= 100 °C
www.vishay.com/doc?91000
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mV
80
www.vishay.com
p-p
100
100
100
3

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