BYM12-50-E3/96 Vishay, BYM12-50-E3/96 Datasheet - Page 3
![1A,50V,50NS,UF SURPERECT,MELF](/photos/16/4/160497/egl41_sml.jpg)
BYM12-50-E3/96
Manufacturer Part Number
BYM12-50-E3/96
Description
1A,50V,50NS,UF SURPERECT,MELF
Manufacturer
Vishay
Datasheet
1.BYM12-100-E397.pdf
(4 pages)
Specifications of BYM12-50-E3/96
Voltage - Forward (vf) (max) @ If
1V @ 1A
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 50V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Surface Mount
Package / Case
DO-213AB, Melf
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
1 V
Recovery Time
50 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88581
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
50
10
10
1
1
Fig. 4 - Typical Reverse Leakage Characteristics
0.2
0
Percent of Rated Peak Reverse Voltage (%)
0.4
1
T
st
J
Instantaneous Forward Voltage (V)
Band Denotes Type and Positive End (Cathode)
= 150 °C
20
Pulse Width = 300 µs
1 % Duty Cycle
0.6
0.022 (0.56)
0.018 (0.46)
1
st
Band
Solderable Ends
0.8
0.205 (5.2)
0.185 (4.7)
40
DO-213AB (GL41)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
D2
T
T
J
For technical questions within your region, please contact one of the following:
J
1.0
= 25 °C
= 150 °C
T
J
= 100 °C
BYM12-50 thru BYM12-400, EGL41A thru EGL41G
EGL41A thru EGL41D
EGL41F thru EGL41G
60
1.2
T
J
1.4
= 25 °C
80
D2 = D1
This datasheet is subject to change without notice.
(2.67)
(2.41)
0.105
0.095
D1 =
1.6
0.022 (0.56)
0.018 (0.46)
100
1.8
+ 0
- 0.008 (0.20)
0.049 (1.25)
MIN.
100
0.1
70
60
50
40
30
20
10
10
0
1
0.01
0.1
DiodesEurope@vishay.com
Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Mounting Pad Layout
Fig. 5 - Typical Junction Capacitance
EGL41A thru EGL41D
EGL41F thru EGL41G
0.1
0.238 (6.0)
0.138 (3.5)
t - Pulse Duration (s)
Reverse Voltage (V)
MAX.
REF.
1
1
www.vishay.com/doc?91000
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
0.118 (3.0)
= 50 mV
MIN.
www.vishay.com
p-p
100
100
3