BYT52D-TAP Vishay, BYT52D-TAP Datasheet - Page 2

• Manufacturer Part Number: BYT52D-TAP
• Description: Fast Recovery Power Rectifier
• Manufacturer: Vishay

Specifications of BYT52D-TAP

• Reel Quantity: 5000
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.3 V at 1 A
• Recovery Time: 200 ns
• Forward Continuous Current: 1.4 A
• Max Surge Current: 50 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Package / Case: SOD-57
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
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2
MAXIMUM THERMAL RESISTANCE (T
PARAMETER
Junction ambient
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 1 - Max. Thermal Resistance vs. Lead Length
16328
0.001
0.01
120
100
949552
0.1
10
80
60
40
20
0
1
0
0
T
0.5
j
5
= 175 °C
V
F
l - Lead Length (mm)
- Forward Voltage (V)
1.0
10
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T
j
= 25 °C
1.5
15
I
F
= 0.5 A, I
T
Lead length l = 10 mm, T
2.0
20
l
L
V
On PC board with spacing 25 mm
= constant
R
TEST CONDITION
= V
amb
Fast Avalanche Sinterglass Diode
2.5
25
V
RRM
l
R
I
R
TEST CONDITION
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
= 1 A
, T
amb
3.0
30
RRM
j
= 150 °C
amb
R
= 25 °C, unless otherwise specified)
= 0.25 A
= 25 °C, unless otherwise specified)
L
= constant
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
SYMBOL
SYMBOL
16329
16330
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R
R
1000
100
thJA
thJA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
t
10
I
I
R
R
rr
0
F
1
25
0
PCB: d = 25 mm
V
R
R
20
thJA
T
= V
amb
50
T
= 100 K/W
j
RRM
MIN.
40
- Junction Temperature (°C)
- Ambient Temperature (°C)
-
-
-
-
60
75
VALUE
80 100 120 140 160 180
100
45
100
TYP.
-
-
-
-
R
125
Document Number: 86029
thJA
I = 10 mm
half sinewave
V
= 45 K/W
R
= V
MAX.
150
150
200
1.3
Rev. 1.7, 30-Jul-10
RRM
5
175
UNIT
K/W
K/W
UNIT
μA
μA
ns
V