BYT54M-TAP Vishay, BYT54M-TAP Datasheet - Page 2

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BYT54M-TAP

Manufacturer Part Number
BYT54M-TAP
Description
Fast Recovery Power Rectifier
Manufacturer
Vishay
Datasheet

Specifications of BYT54M-TAP

Reel Quantity
5000
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.5 V at 1 A
Recovery Time
100 ns
Forward Continuous Current
1.25 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Package / Case
SOD-57
Maximum Operating Temperature
+ 165 C
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYT54M-TAP
Manufacturer:
VISHAY
Quantity:
120
Part Number:
BYT54M-TAP
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
BYT54M-TAP
Quantity:
10 000
Company:
Part Number:
BYT54M-TAP
Quantity:
70 000
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
www.vishay.com
116
MAXIMUM THERMAL RESISTANCE (T
PARAMETER
Junction ambient
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Fig. 1 - Max. Thermal Resistance vs. Lead Length
16338
0.001
Fig. 2 - Forward Current vs. Forward Voltage
0.01
120
100
949552
0.1
80
60
40
20
10
0
1
0
0
T
0.5
j
= 175 °C
5
V
F
1.0
l - Lead Length (mm)
- Forward Voltage (V)
10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
T
1.5
j
For technical questions within your region, please contact one of the following:
= 25 °C
15
2.0
I
F
T
= 0.5 A, I
l
L
20
Lead length l = 10 mm, T
V
On PC board with spacing 25 mm
= constant
2.5
R
TEST CONDITION
= V
amb
Fast Avalanche Sinterglass Diode
25
3.0
l
V
RRM
R
I
R
TEST CONDITION
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
= 1 A
, T
3.5
amb
30
RRM
j
= 150 °C
amb
R
= 25 °C, unless otherwise specified)
= 0.25 A
= 25 °C, unless otherwise specified)
L
= constant
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
16339
16340
SYMBOL
SYMBOL
1000
DiodesEurope@vishay.com
100
R
R
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
thJA
thJA
V
0
t
I
I
1
R
R
rr
25
F
0
PCB: d = 25 mm
R
V
thJA
R
20
T
= V
50
amb
T
= 100 K/W
j
RRM
40
- Junction Temperature (°C)
MIN.
- Ambient Temperature (°C)
-
-
-
-
60
75
80 100 120 140 160 180
VALUE
100
100
45
TYP.
-
-
-
-
R
125
thJA
Document Number: 86031
half sinewave
I = 10 mm
V
R
= 45 K/W
= V
150
MAX.
Rev. 1.7, 25-Aug-10
RRM
150
100
1.5
5
175
UNIT
K/W
K/W
UNIT
μA
μA
ns
V

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