CM100TL-12NF Powerex Inc, CM100TL-12NF Datasheet - Page 3

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CM100TL-12NF

Manufacturer Part Number
CM100TL-12NF
Description
IGBT Power Module
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM100TL-12NF

Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 100A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
15nF @ 10V
Power - Max
540W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM100TL-12NF
Manufacturer:
MITSUBISH
Quantity:
1 000
Part Number:
CM100TL-12NF
Manufacturer:
MIT
Quantity:
20 000
CM100TL-12NF
Six IGBTMOD™ NF-Series Module
100 Amperes/600 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
Contact Thermal Resistance
External Gate Resistance
*T
10/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
C
, T
200
150
100
10
10
10
50
0
f
3
2
1
measured point is just under the chips.
0
0
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
FORWARD CHARACTERISTICS
OUTPUT CHARACTERISTICS
1
T
T
2
j
j
= 25°C
= 125°C
FREE-WHEEL DIODE
V
15
13
GE
(TYPICAL)
(TYPICAL)
2
4
= 20V
6
3
8
CE
EC
T
, (VOLTS)
4
, (VOLTS)
8
j
= 25° C
12
11
10
9
10
5
R
R
Symbol
R
th(j-c)
th(j-c)
th(c-f)
R
10
G
10
10
10
-1
0
4
3
2
1
2
1
0
Q
D
10
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
j
GE
GE
= 25°C unless otherwise specified
Per 1/6 Module, Thermal Grease Applied
COLLECTOR-CURRENT, I
= 0V
= 15V
T
T
j
j
50
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
10
0
(TYPICAL)
(TYPICAL)
Per FWDi 1/6 Module
Per IGBT 1/6 Module
100
Test Conditions
C
10
, (AMPERES)
1
150
C
C
C
CE
ies
oes
res
, (VOLTS)
200
10
2
10
10
10
10
10
8
6
4
2
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
6
1
T
Min.
6.3
j
= 25°C
GATE-EMITTER VOLTAGE, V
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
8
COLLECTOR-EMITTER
10
HALF-BRIDGE
Typ.
(TYPICAL)
(TYPICAL)
12
10
t
t
t
t
f
d(off)
d(on)
r
2
I
I
14
C
C
= 200A
= 100A
0.085
C
Max.
0.23
0.41
V
V
R
T
Inductive Load
, (AMPERES)
63
j
CC
GE
G
GE
16
= 125°C
= 6.3Ω
, (VOLTS)
= 300V
= ±15V
I
C
= 30A
18
°C/W
°C/W
°C/W
Units
10
Ω
20
3
3

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