CM200TL-12NF Powerex Inc, CM200TL-12NF Datasheet - Page 2

• Manufacturer Part Number: CM200TL-12NF
• Description: IGBT Power Module
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM200TL-12NF

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 30nF @ 10V
• Power - Max: 890W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Voltage: 600V
• Current: 200A
• Circuit Configuration: 6-Pac
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B-3015 x3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM200TL-12NF
Six IGBTMOD™ NF-Series Module
200 Amperes/600 Volts
Absolute Maximum Ratings, T
Characteristics
Power Device Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T
Peak Collector Current (Tj ≤ 150°C)
Emitter Current***
Peak Emitter Current***
Maximum Collector Dissipation (T
Mounting Torque, M5 Mounting Screws
Mounting Torque, M5 Main Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Electrical and Mechanical Characteristics, T
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Reverse Recovery Time***
Reverse Recovery Charge***
Emitter-Collector Voltage***
*T
**Pulse width and repetition rate should be such that device junction temperature (T
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
C
, T
f
measured point is just under the chips.
C
= 88°C)*
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
C
= 25°C, T
j
= 25°C unless otherwise specified
j
< 150°C)
V
V
Symbol
CE(sat)
t
t
I
I
C
GE(th)
C
C
d(on)
d(off)
V
CES
GES
Q
Qrr
t
oes
res
t
t
EC
ies
rr
r
G
f
j
= 25°C unless otherwise specified
Inductive Load Switching Operation
V
CC
I
C
I
C
= 300V, I
= 200A, V
V
= 200A, V
R
V
CC
V
V
V
G
I
CE
C
GE1
I
GE
CE
E
= 3.1Ω, I
= 300V, I
= 20mA, V
= 10V, V
Test Conditions
= 200A, V
j
) does not exceed T
= V
= V
= V
C
GE
= 200A, V
CES
GES
GE
GE2
= 15V, T
E
C
= 15V, T
GE
, V
, V
= 200A,
CE
= 15V,
= 200A,
GE
GE
CE
= 0V
= 10V
= 0V
GE
= 0V
= 0V
j
Symbol
j
V
V
= 125°C
V
T
= 25°C
I
I
= 15V
GES
P
CES
CM
EM
—
—
—
j(max)
T
I
I
ISO
stg
C
E
C
j
rating.
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
CM200TL-12NF
-40 to 150
-40 to 125
400**
400**
2500
750
600
±20
200
200
890
31
31
800
Typ.
1.7
1.7
4.8
—
—
—
—
—
—
—
—
—
—
—
7
Max.
30.0
120
100
300
300
150
1.0
0.5
2.2
3.7
1.2
2.8
—
—
—
8
Amperes
Amperes
Amperes
Amperes
Watts
Grams
Units
Volts
Volts
Volts
in-lb
in-lb
°C
°C
Units
Volts
Volts
Volts
Volts
mA
nC
µC
µA
ns
ns
ns
ns
ns
nf
nf
nf