ESH2PD-M3/84A Vishay, ESH2PD-M3/84A Datasheet - Page 3

• Manufacturer Part Number: ESH2PD-M3/84A
• Description: 1A, 200V, E.FF SMDIODE
• Manufacturer: Vishay

Specifications of ESH2PD-M3/84A

• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 980mV
• Reverse Recovery Time Trr Max: 25ns
• Forward Surge Current Ifsm: RoHS Compliant
• Diode Type: Fast Recovery

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 89016
Revision: 08-Jul-09
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
0.01
100
100
0.1
10
0.1
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
10
T
J
Percent of Rated Peak Reverse Voltage (%)
= 150 °C
20
0.4
T
Instantaneous Forward Voltage (V)
J
0.086 (2.18)
0.074 (1.88)
= 175 °C
30
0.013 (0.35)
0.004 (0.10)
0.6
T
J
40
= 175 °C
T
J
= 25 °C
T
0.8
T
50
J
J
= 125 °C
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= 125 °C
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T
J
0.012 (0.30)
0.000 (0.00)
= 150 °C
60
1.0
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
70
T
Cathode Band
J
1.2
= 25 °C
0.018 (0.45)
0.006 (0.15)
80
1.4
90
100
1.6
0.045 (1.15)
0.033 (0.85)
DO-220AA (SMP)
0.053 (1.35)
0.041 (1.05)
0.100
(2.54)
ESH2PB, ESH2PC & ESH2PD
1000
100
10
1
0.1
[e-mail]
0.103 (2.60)
0.087 (2.20)
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.105
(2.67)
0.012 (0.30) REF.
Reverse Voltage (V)
1
(0.635)
0.025
(0.762)
0.030
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
10
0.050
(1.27)
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100
3