FM400TU-3A Powerex Inc, FM400TU-3A Datasheet - Page 4

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FM400TU-3A

Manufacturer Part Number
FM400TU-3A
Description
TRANSISTOR,MOSFET POWER MODULE,3-PH BRIDGE,150V V(BR)DSS
Manufacturer
Powerex Inc
Datasheet

Specifications of FM400TU-3A

Rohs Compliant
YES
Fet Type
6 N-Channel (3-Phase Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.55 mOhm @ 200A, 15V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
7.3V @ 20mA
Gate Charge (qg) @ Vgs
1300nC @ 15V
Input Capacitance (ciss) @ Vds
75000pF @ 10V
Power - Max
650W
Mounting Type
Chassis Mount
Package / Case
Module
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FM400TU-3A
Manufacturer:
IR
Quantity:
1 000
Part Number:
FM400TU-3A
Manufacturer:
MIT
Quantity:
20 000
Part Number:
FM400TU-3A
Quantity:
55
4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
FM400TU-3A
6-Pack High Power MOSFET Module
200 Amperes/150 Volts
10
10
10
10
10
10
10
-1
-2
7
6
5
4
3
2
1
0
1
0
3
2
1
10
10
0
DRAIN-SOURCE ON-STATE RESISTANCE
1
SWITCHING LOSS VS. DRAIN CURRENT
1
SWITCHING TIME VS. DRAIN CURRENT
t
t
V
V
R
T
INDUCTIVE LOAD
d(off)
d(on)
I
D
j
DD
GS
G
20
= 125°C
= 200A
VS. TEMPERATURE (TYPICAL )
= 6.3Ω
= 80V
= ±15V
CHANNEL TEMPERATURE, T
DRAIN CURRENT, I
V
V
DRAIN CURRENT, I
GS
GS
40
= 12V
= 15V
60
(TYPICAL )
(TYPICAL)
10
10
80
2
2
V
V
R
T
INDUCTIVE LOAD
D
D
100
DD
GS
j
, (AMPERES)
G
, (AMPERES)
= 125°C
= 6.3Ω
= 80V
= ±15V
E
E
E
t
t
r
f
SW(off)
SW(on)
rr
120 140
j
, (°C)
10
160
10
3
3
10
10
10
10
10
10
10
10
10
20
15
10
-1
-2
-3
-1
-2
5
0
0
2
1
0
10
0
0
SWITCHING LOSS VS. GATE RESISTANCE
-3
I
V
V
I
T
INDUCTIVE LOAD
Single Pulse
T
D
D
GATE CHARGE CHARACTERISTICS
DD
GS
j
C
IMPEDANCE CHARACTERISTICS
= 200A
= 200A
= 125°C
10
= 25°C
= 80V
= ±15V
450
10
TRANSIENT THERMAL
GATE RESISTANCE, R
E
20
GATE CHARGE, Q
-2
SW(on)
E
V
(TYPICAL)
SW(off)
(TYPICAL )
(TYPICAL)
DD
30
TIME, (s)
900
10
10
= 60V
-1
-5
40
G
V
, (nC)
DD
50
G
1350
, (Ω)
10
10
E
= 80V
rr
-4
0
60
1800
10
10
70
-3
1
10
10
10
-1
-2
-3
10
10
10
10
7
6
5
4
3
2
1
0
4
3
2
1
0
0
SWITCHING TIME VS. GATE RESISTANCE
20
10
VS. TEMPERATURE (TYPICAL )
GATE THRESHOLD VOLTAGE
CHANNEL TEMPERATURE, T
40
GATE RESISTANCE, R
20
60
(TYPICAL )
30
80
40
V
V
I
T
INDUCTIVE LOAD
D
t
100
DD
GS
j
d(on)
= 125°C
= 200A
= 80V
= ±15V
G
50
, (Ω)
t
V
I
120 140
d(off)
D
GS
j
, (°C)
= 20mA
= 10V
60
Rev. 11/09
t
t
r
f
160
70

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