GA100NA60UP Vishay, GA100NA60UP Datasheet
GA100NA60UP
Specifications of GA100NA60UP
Related parts for GA100NA60UP
GA100NA60UP Summary of contents
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... Any terminal to case minute ISOL ° 100 ° Stg screw SYMBOL TYP. R thJC R thJC R 0.05 thCS 30 GA100NA60UP Vishay Semiconductors MAX. 600 100 50 200 = 20 V; pulse width limited 200 ± 20 2500 250 100 - 150 12 (1.3) MAX. - 0. www.vishay.com DiodesEurope@vishay.com UNITS ° ...
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... GA100NA60UP Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Temperature coeffecient of breakdown voltage Collector to emitter saturation voltage Gate threshold voltage Temperature coefficient of threshold voltage Forward transconductance Zero gate voltage collector current Diode forward voltage drop Gate to emitter leakage current SWITCHING CHARACTERISTICS (T ...
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... T = 150 150 15V = 15V 4.0 4.0 5.0 5.0 = 50V 8.0 9.0 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0. Rectangular Pulse Duration (sec) 1 GA100NA60UP Vishay Semiconductors 100 100 125 ° Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 2 15V PULSE WIDTH 2 ...
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... GA100NA60UP Vishay Semiconductors 14000 1MHz ies 12000 res oes ce gc 10000 ? C ies 8000 6000 C oes 4000 2000 C res Collector-to-Emitter Voltage (V) CE Fig Typical Capacitance vs. Collector to Emitter Voltage 400V 50A 100 200 300 Q , Total Gate Charge (nC) G Fig Typical Gate Charge vs. ...
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... For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 1.6 2 100A 50A 25A /dt F GA100NA60UP Vishay Semiconductors 100A 50A 25A 5° ° /dt - (A/μ Fig Typical Recovery Current vs. dI ...
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... GA100NA60UP Vishay Semiconductors 5° ° 100A 50A 25A /dt - (A/µ Fig Typical dI (rec)M 430 µ Fig. 17a - Test Circuit for Measurement d(on) r d(off) www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Insulated Gate Bipolar Transistor ...
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... I rr Diode recovery waveforms E = rec Diode reverse recovery energy t3 t4 Fig. 17d - Test Waveforms for Circuit of Fig. 17a, Defining rec Gate signal device under test 50 V Current D.U.T. Voltage in D.U.T. Current 480 V GA100NA60UP Vishay Semiconductors 1000 6000 µF 100 V Fig. 18a - Clamped Inductive Load Test Circuit ...
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... GA100NA60UP Vishay Semiconductors ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION Dimensions Packaging information www.vishay.com For technical questions within your region, please contact one of the following: 8 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A A 100 Device IGBT - Silicon technology: ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...