GB200TS60NPBF Vishay, GB200TS60NPBF Datasheet
GB200TS60NPBF
Specifications of GB200TS60NPBF
Related parts for GB200TS60NPBF
GB200TS60NPBF Summary of contents
Page 1
... ° ° ° Any terminal to case minute ISOL For technical questions, contact: indmodules@vishay.com GB200TS60NPbF Vishay High Power Products CE(on) temperature coefficient CE(on) ® antiparallel diode with ultrasoft reverse DBC MAX. 600 209 142 400 400 178 121 ± 20 781 438 2500 www ...
Page 2
... GB200TS60NPbF Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current SWITCHING CHARACTERISTICS (T PARAMETER Turn-on switching loss Turn-off switching loss Total switching loss ...
Page 3
... Revision: 04-May-10 INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A SYMBOL MIN Stg IGBT - R thJC Diode - R - thCS - - - For technical questions, contact: indmodules@vishay.com GB200TS60NPbF Vishay High Power Products TYP. MAX. - 150 0.13 0.16 0.19 0.32 0 185 - 300 250 200 150 100 Tj = 125° 25° ...
Page 4
... GB200TS60NPbF Vishay High Power Products 200 150 100 Tj = 125° 25°C 0 0.0 0.5 1.0 1.5 V (V) F Fig Diode Forward Characteristics 500 μs p 160 140 120 100 100 150 Maximum DC Collector Current (A) Fig Maximum Collector Current vs. Case Temperature 8000 7000 6000 5000 ...
Page 5
... V = 360 200 Document Number: 94503 Revision: 04-May-10 INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A 47 ohm 160 200 vs. I Fig Typical Switching Losses vs. Gate Resistance vs vs 125 °C,R J For technical questions, contact: indmodules@vishay.com GB200TS60NPbF Vishay High Power Products (Ω Ω 125 ° ...
Page 6
... GB200TS60NPbF Vishay High Power Products 0 0. 0.01 0.001 1E-05 Fig Maximum Transient Thermal Impedance, Junction to Case (IGBT 0 0.02 0. 0.01 0.001 1E-05 Fig Maximum Transient Thermal Impedance, Junction to Case (HEXFRED www.vishay.com 6 INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A Notes: 1 ...
Page 7
... Insulated Gate Bipolar Transistor (IGBT IGBT Generation 5 NPT - Current rating (200 = 200 A) - Circuit configuration (T = Half-bridge) - Package indicator (S = INT-A-PAK) - Voltage rating (60 = 600 V) - Speed/type (N = Ultrafast IGBT) - Lead (Pb)-free LINKS TO RELATED DOCUMENTS For technical questions, contact: indmodules@vishay.com GB200TS60NPbF Vishay High Power Products N PbF 7 8 www.vishay.com/doc?95173 www.vishay.com 7 ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...