GI2403-E3/45 Vishay, GI2403-E3/45 Datasheet - Page 3
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GI2403-E3/45
Manufacturer Part Number
GI2403-E3/45
Description
16A,150V,35NS,DUAL UF RECT
Manufacturer
Vishay
Datasheet
1.GI2401-E345.pdf
(4 pages)
Specifications of GI2403-E3/45
Voltage - Forward (vf) (max) @ If
975mV @ 8A
Current - Reverse Leakage @ Vr
50µA @ 150V
Current - Average Rectified (io) (per Diode)
16A
Voltage - Dc Reverse (vr) (max)
150V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
150 V
Forward Voltage Drop
0.975 V at 8 A
Recovery Time
35 ns
Forward Continuous Current
16 A
Max Surge Current
125 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88624
Revision: 30-Aug-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.2
0
Percent of Rated Peak Reverse Voltage (%)
0.4
Instantaneous Forward Voltage (V)
20
T
J
0.6
= 125 °C
40
0.8
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
Pulse Width = 300 µs
1 % Duty Cycle
T
0.160 (4.06)
0.140 (3.56)
1.0
J
60
0.057 (1.45)
0.045 (1.14)
= 125 °C
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
T
J
1.2
= 25 °C
T
T
J
J
0.415 (10.54) MAX.
80
= 100 °C
= 25 °C
1.4
0.370 (9.40)
0.360 (9.14)
1
PIN
2
100
1.6
3
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.635 (16.13)
0.625 (15.87)
0.113 (2.87)
0.103 (2.62)
0.154 (3.91)
0.148 (3.74)
TO-220AB
1.148 (29.16)
1.118 (28.40)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.022 (0.56)
0.014 (0.36)
1000
100
0.560 (14.22)
0.530 (13.46)
10
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.603 (15.32)
0.573 (14.55)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
Reverse Voltage (V)
1
GI2401 thru GI2404
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3