HSMP-386F-TR1 Avago Technologies US Inc., HSMP-386F-TR1 Datasheet - Page 3

• Manufacturer Part Number: HSMP-386F-TR1
• Description: PIN DIODE,DUAL,COMMON CATHODE,50V V(BR),SOT-323
• Manufacturer: Avago Technologies US Inc.

Specifications of HSMP-386F-TR1

• Rohs Compliant: NO
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 50V
• Current - Max: 1A
• Capacitance @ Vr, F: 0.2pF @ 50V, 1MHz
• Resistance @ If, F: 1.5 Ohm @ 100mA, 100MHz
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Equivalent Circuit Model
HSMP-386x Chip*
HSMP-386x Typical Parameters at T
Typical Performance, T
1000
Figure 1. RF Capacitance vs. Reverse
Bias.
0.35
0.30
0.25
0.20
0.15
Figure 4. Reverse Recovery Time vs.
Forward Current for Various Reverse
Voltages.
100
1.5 Ω
Part Number
Test Conditions
10
R
10
s
0
HSMP-
100 MHz
386x
1 GHz
2
1 MHz
FORWARD CURRENT (mA)
4
REVERSE VOLTAGE (V)
6
8
0.12 pF
20
R
10 12
C
j
j
Total Resistance
14
f = 100 MHz
V
V
V
I
R
16
F
R
R
R
= 20 V
= 1 mA
= 5 V
= 10 V
T
22
18 20
(Ω)
C
30
= 25°C, each diode
R
C
R
I = Forward Bias Current in mA
* See AN1124 for package models
T
T
j
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
Figure 5. Forward Current vs.
Forward Voltage.
=
1000
= 1.5 + R
= C
0.01
Carrier Lifetime
100
100
10
0.1
10
1
12
0.01
1
I
T
P
0.9
0
I
R
F
+ C
τ (ns)
= 250 mA
= 50 mA
V
Ω
500
C
F
0.2
j
– FORWARD VOLTAGE (mA)
j
= 25°C
BIAS CURRENT (mA)
125°C 25°C –50°C
0.1
0.4
0.6
1
T
T
T
A
A
A
= +85°C
= +25°C
= –55°C
Reverse Recovery Time
0.8
10
1.0
90% Recovery
I
V
F
T
R
= 20 mA
rr
100
1.2
= 10 V
80
(ns)
Figure 3. 2nd Harmonic Input
Intercept Point vs. Forward Bias
Current for Switch Diodes.
3
120
115
110
105
100
95
90
85
1
Diode Mounted as a
Series Switch in a
50 Ω Microstrip and
Tested at 123 MHz
I
F
– FORWARD BIAS CURRENT (mA)
Total Capacitance
f = 1 MHz
V
C
R
T
0.20
= 50 V
(pF)
10
30