IRLR014TR Vishay, IRLR014TR Datasheet - Page 7

• Manufacturer Part Number: IRLR014TR
• Description: LOGIC MOSFET N-CHANNEL 60V
• Manufacturer: Vishay

Specifications of IRLR014TR

• Rohs Compliant: NO
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 7.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 7.7 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 26 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 110 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91321.
Document Number: 91321
S10-1139-Rev. C, 17-May-10
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
IRLR014, IRLU014, SiHLR014, SiHLU014
Body diode forward
-
+
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
current
SD
controlled by duty factor “D”
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
g
Period
P.W.
+
V
I
V
SD
GS
DD
= 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
7