IRLR8203 International Rectifier, IRLR8203 Datasheet - Page 7

• Manufacturer Part Number: IRLR8203
• Description: MOSFET
• Manufacturer: International Rectifier

Specifications of IRLR8203

• Thermal Resistance: 1.09°C/W
• Gate-to-drain Charge: 17nC
• Mounting Type: Through Hole
• Peak Reflow Compatible (260 C): No
• Drain Source On Resistance @ 10v: 6.8mohm
• Current Rating: 110A
• Drain Source On Resistance @ 4.5v: 9mohm
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 14. For N-Channel HEXFET
V
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
ƒ
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Ground Plane
Current Transformer
Low Stray Inductance
Low Leakage Inductance
®
D =
-
Power MOSFETs
G
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
IRLR/U8203
V
DD
*
7