IRLR8203 International Rectifier, IRLR8203 Datasheet - Page 2

• Manufacturer Part Number: IRLR8203
• Description: MOSFET
• Manufacturer: International Rectifier

Specifications of IRLR8203

• Thermal Resistance: 1.09°C/W
• Gate-to-drain Charge: 17nC
• Mounting Type: Through Hole
• Peak Reflow Compatible (260 C): No
• Drain Source On Resistance @ 10v: 6.8mohm
• Current Rating: 110A
• Drain Source On Resistance @ 4.5v: 9mohm
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Diode Characteristics
IRLR/U8203
Dynamic @ T
Avalanche Characteristics
Static @ T
V
R
V
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
Symbol
E
I
V
Symbol
I
I
t
Q
t
Q
I
I
d(on)
d(off)
AR
DSS
r
f
S
SM
rr
rr
GSS
V
2
fs
AS
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
oss
rr
rr
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Static Drain-to-Source On-Resistance
Diode Forward Voltage
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
Min. Typ. Max. Units
30
35
–––
–––
––– 0.75
––– 0.65 –––
–––
–––
–––
–––
0.027
2430 –––
1200 –––
–––
–––
–––
–––
–––
––– -200
–––
250
–––
–––
5.6
7.1
5.7
33
17
23
15
99
30
69
48
62
49
67
110
–––
–––
100
200
–––
–––
–––
–––
–––
–––
120
100
3.0
8.5
1.3
20
50
25
34
6.8
9.0
72
92
74
„
V/°C
m
µA
nA
nC
ns
pF
nC
nC
ns
ns
V
V
S
A
V
Typ.
–––
–––
I
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs ƒ
T
di/dt = 100A/µs ƒ
D
integral reverse
Reference to 25°C, I
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
GS
GS
DS
J
J
J
J
G
= 12A
= 12A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 6.8
= V
= 24V, V
= 24V, V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 15V, I
= 24V
= 4.5V ƒ
= 0V, V
= 15V
= 4.5V
= 0V
= 15V
GS
, I
D
S
F
DS
D
D
D
Conditions
= 250µA
D
GS
GS
S
F
Conditions
Conditions
ƒ
= 12A, V
= 12A, V
= 250µA
= 15A
= 12A
= 12A
= 12A, V
= 12A, V
= 10V
Max.
= 0V, T
310
= 0V
30
www.irf.com
D
GS
R
ƒ
= 1mA
ƒ
=15V
J
GS
R
=15V
= 125°C
= 0V
G
= 0V ƒ
Units
mJ
A
ƒ
D
S