KBU8D/1 Vishay, KBU8D/1 Datasheet - Page 3

Diode

KBU8D/1

Manufacturer Part Number
KBU8D/1
Description
Diode
Manufacturer
Vishay
Datasheet

Specifications of KBU8D/1

Diode Type
Bridge Rectifier
Peak Reflow Compatible (260 C)
No
Current Rating
8A
Leaded Process Compatible
No
Forward Voltage
1V
Forward Current If
8A
Package / Case
KBU
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
200V
Rms Voltage (max)
140V
Peak Non-repetitive Surge Current (max)
300A
Avg. Forward Curr (max)
8A
Rev Curr
10uA
Package Type
Case KBU
Operating Temp Range
-50C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88658
Revision: 15-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
100
0.1
0.1
10
10
1
1
0.6
0
Percent of Rated Peak Reverse Voltage (%)
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.9
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
Pulse Width = 300 µs
1 % Duty Cycle
For technical questions within your region, please contact one of the following:
J
= 25 °C
1.0
60
T
T
J
J
= 100 °C
1.1
= 25 °C
(19.3)
(25.4)
0.760
MAX.
MIN.
1.0
0.205 (5.2)
0.185 (4.7)
80
0.160 (4.1)
0.140 (3.6)
1.2
0.220 (5.6)
0.180 (4.6)
0.660
(16.8)
0.700
(17.8)
100
1.3
0.075 (1.9) R TYP. (2 Places)
Case Style KBU
0.895 (22.7)
0.935 (23.7)
0.240 (6.09)
0.200 (5.08)
1000
100
10
0.052 (1.3)
0.048 (1.2)
Figure 5. Typical Junction Capacitance Per Diode
0.455 (11.3)
0.405 (10.3)
0.165 (4.2)
0.185 (4.7)
1
DIA.
45°
Vishay General Semiconductor
0.280 (7.1)
0.260 (6.6)
0.085 (2.2)
0.065 (1.7)
KBU8A thru KBU8M
Reverse Voltage (V)
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3

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