MBR1545CT/45 Vishay, MBR1545CT/45 Datasheet - Page 3

• Manufacturer Part Number: MBR1545CT/45
• Description: Diode
• Manufacturer: Vishay

Specifications of MBR1545CT/45

• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: No
• Lead Free Status: Contains lead
• Voltage - Forward (vf) (max) @ If: 570mV @ 7.5A
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Current - Average Rectified (io) (per Diode): 7.5A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 15 A
• Max Surge Current: 690 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.84 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: MBR1545CT/45GI; MBR1545CTGI; MBR1545CTGI

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88670
Revision: 08-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
0.01
175
150
125
100
100
0.1
25
20
15
10
75
50
25
10
5
0
1
0
1
0
Figure 1. Forward Current Derating Curve
T
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
J
= 125 °C
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
Case Temperature (°C)
Current Per Diode
50
T
8.3 ms Single Half Sine-Wave
[e-mail], [e-mail], [e-mail]
J
Resistive or Inductive Load
= T
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
For technical questions within your region, please contact one of the following:
10
T
J
J
Max.
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
100
100
150
MBR(F,B)1535CT thru MBR(F,B)1560CT
10 000
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
0.001
0.01
100
100
100
0.1
0.1
10
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
40
1
60
T
T
J
J
10
= 125 °C
= 75 °C
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
T
= 50 mVp-p
J
80
= 25 °C
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100
100
100
3