SD103B-TAP Vishay, SD103B-TAP Datasheet - Page 2

SCHOTTKY DIODE DO35-e2

SD103B-TAP

Manufacturer Part Number
SD103B-TAP
Description
SCHOTTKY DIODE DO35-e2
Manufacturer
Vishay
Datasheet

Specifications of SD103B-TAP

Product
Schottky Diodes
Peak Reverse Voltage
30 V
Max Surge Current
15 A
Configuration
Single
Recovery Time
10 ns
Forward Voltage Drop
0.6 V at 0.2 A
Maximum Reverse Leakage Current
5 uA at 20 V
Operating Temperature Range
+ 125 C
Mounting Style
Through Hole
Package / Case
DO-35
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SD103A, SD103B, SD103C
Vishay Semiconductors
Thermal Characteristics
T
1)
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Reverse Breakdown Voltage
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
amb
amb
amb
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
16765
0.001
Figure 1. Forward Current vs. Forward Voltage
1000
0.01
100
0.1
Parameter
10
1
0 100 200 300 400 500 600 700 800 900 1000
Parameter
V
F
- Forward Voltage (mV)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
I
F
V
= I
R
recover to 0.1 I
Test condition
R
= 0 V, f = 1 MHz
I
I
F
I
V
V
V
F
R
= 50 to 200 mA,
= 200 mA
R
R
R
= 20 mA
= 50 µA
= 30 V
= 20 V
= 10 V
Test condition
R
SD103C
SD103C
SD103A
SD103B
SD103A
SD103B
Part
Symbol
R
T
thJA
T
stg
16766
j
Figure 2. Forward Current vs. Forward Voltage
Symbol
V
V
V
5
4
3
2
1
0
C
V
V
(BR)
(BR)
(BR)
DiodesEurope@vishay.com
I
I
I
t
0.0
R
R
R
rr
F
F
D
0.5
V
Min.
F
40
30
20
- 55 to + 150
- Forward Voltage (V)
Value
310
125
1.0
1)
Typ.
50
10
Document Number 85754
1.5
Max.
370
600
Rev. 1.6, 23-Jul-10
5
5
5
2.0
K/W
Unit
°C
°C
Unit
mV
mV
µA
µA
µA
pF
ns
V
V
V

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