SEMIX151GB12E4S SEMIKRON, SEMIX151GB12E4S Datasheet - Page 2

• Manufacturer Part Number: SEMIX151GB12E4S
• Description: IGBT 4 (Trench)
• Manufacturer: SEMIKRON

Specifications of SEMIX151GB12E4S

• Family/system: SEMiX
• Voltage (v): 1200
• Current (a): 150
• Chip-type: IGBT 4 (Trench)
• Case: SEMiX 1s

SEMiX151GB12E4s
Trench IGBT Modules
SEMiX151GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
• Product reliability results are valid for
2
SEMiX
coefficient
max.
T
j
CE(sat)
=150°C
with positive temperature
®
1s
GB
C
=125°C
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
R
M
M
w
Temperatur Sensor
R
B
F
RRM
CE
F
F0
rr
100/125
th(j-c)
CC'+EE'
th(c-s)
100
rr
s
t
= V
EC
Rev. 0 – 05.05.2010
I
V
chip
I
di/dt
V
V
res., terminal-chip
Conditions
per diode
per module
to heat sink (M5)
T
R
T[K];
F
F
GE
GE
CC
c
(T)
= 150 A
= 150 A
=100°C (R
=R
off
= 0 V
= -15 V
= 600 V
= 3400 A/µs
100
exp[B
25
=5 kΩ)
100/125
T
T
T
T
T
T
T
T
T
T
T
to terminals (M6)
(1/T-1/T
j
j
j
j
j
j
j
j
j
C
C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 125 °C
100
)];
min.
1.1
0.7
4.3
6.7
2.5
3
493 ± 5%
0.075
3550
±2%
typ.
115
2.1
2.1
1.3
0.9
5.6
7.8
8.9
0.7
23
16
1
© by SEMIKRON
max.
2.46
0.31
145
2.4
1.5
1.1
6.4
8.5
5
5
Unit
K/W
K/W
mΩ
mΩ
mΩ
mΩ
Nm
Nm
Nm
µC
mJ
nH
Ω
V
V
V
V
A
g
K