SEMIX202GB066HDS SEMIKRON, SEMIX202GB066HDS Datasheet
SEMIX202GB066HDS
Specifications of SEMIX202GB066HDS
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SEMIX202GB066HDS Summary of contents
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... SEMiX202GB066HDs SEMiX ® 2s Trench IGBT Modules SEMiX202GB066HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to T =125° ...
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... SEMiX202GB066HDs SEMiX ® 2s Trench IGBT Modules SEMiX202GB066HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to T =125° ...
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... SEMiX202GB066HDs Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 1 – 13.01.2012 = ...
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... SEMiX202GB066HDs Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 1 – 13.01.2012 G CC'+EE' ...
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... SEMiX202GB066HDs SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...