SI1967DH-T1-GE3 Vishay, SI1967DH-T1-GE3 Datasheet

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SI1967DH-T1-GE3

Manufacturer Part Number

SI1967DH-T1-GE3

Description

Dual N-Ch SC-70-6 (SOT-363) 20V 490mohm @ 4.5V

Manufacturer

Vishay

Series

TrenchFET®r

Datasheet

1.SI1967DH-T1-GE3.pdf (7 pages)

Specifications of SI1967DH-T1-GE3

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

490 mOhm @ 910mA, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

1.3A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

4nC @ 8V

Input Capacitance (ciss) @ Vds

110pF @ 10V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI1967DH-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SI1967DH-T1-GE3

Manufacturer:

VISHAY

Quantity:

15 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI1967DH-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

H&T Electronics

Part Number:

SI1967DH-T1-GE3

Quantity:

70 000

Current page: 1 of 7
Download datasheet (109Kb)

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 220 °C/W.

Document Number: 68784

S10-0721-Rev. B, 29-Mar-10

G

S

D

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

Ordering Information: Si1967DH-T1-E3 (Lead (Pb)-free)

PRODUCT SUMMARY

1

1

2

V

DS

- 20

1

2

3

(V)

SC-70 (6-LEADS)

SOT-363

Top View

0.490 at V

0.640 at V

0.790 at V

R

Si1967DH-T1-GE3 (Lead (Pb)-free and Halogen-free)

DS(on)

6

5

4

GS

GS

GS

J

(Ω)

= - 4.5 V

= - 2.5 V

= - 1.8 V

D

G

S

= 150 °C)

2

1

2

b, d

Dual P-Channel 20 V (D-S) MOSFET

I

- 1.3

- 1.2

- 1.0

D

(A)

Steady State

a

T

T

T

T

T

T

T

T

T

T

t ≤ 5 s

Marking Code

C

C

C

C

C

A

A

A

A

A

A

DF

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 25 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C, unless otherwise noted

Q

1.6 nC

g

XX

(Typ.)

Part # Code

Symbol

Lot Traceability

and Date Code

R

R

thJA

thJF

Symbol

T

J

V

V

I

P

, T

I

DM

I

DS

GS

D

S

D

FEATURES

APPLICATIONS

stg

• Halogen-free According to IEC 61249-2-21

• TrenchFET

• PWM Optimized

•

• Load Switch for Portable Devices

Definition

Compliant to RoHS Directive 2002/95/EC

Typical

130

80

G

1

®

Power MOSFET

P-Channel MOSFET

- 55 to 150

- 0.83

- 1.0

- 0.6

0.74

0.47

Limit

- 1.3

- 1.1

1.25

- 20

± 8

0.8

D

- 3

- 1

S

1

1

b, c

b, c

b, c

b, c

b, c

a

Maximum

170

100

Vishay Siliconix

G

2

Si1967DH

P-Channel MOSFET

www.vishay.com

D

S

2

2

°C/W

Unit

Unit

°C

W

V

A

1

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