SI2305CDS-T1-GE3 Vishay, SI2305CDS-T1-GE3 Datasheet

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SI2305CDS-T1-GE3

Manufacturer Part Number
SI2305CDS-T1-GE3
Description
P-CHANNEL 8-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI2305CDS-T1-GE3

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 4.5 V
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.4 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Drain Source Voltage Vds
-8V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
-4.5V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-23
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number:
SI2305CDS-T1-GE3/N5
Manufacturer:
ANSC
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
d. T
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
C
DS
- 8
= 25 °C.
(V)
G
S
0.035 at V
0.048 at V
0.065 at V
1
2
Si2305CDS (N5)*
* Marking Code
R
(SOT-23)
Top View
TO-236
DS(on)
GS
GS
GS
= - 4.5 V
= - 2.5 V
= - 1.8 V
J
(Ω)
= 150 °C)
a, c
3
D
P-Channel 8 V (D-S) MOSFET
I
D
- 5.8
- 5.0
- 4.3
(A)
d
A
= 25 °C, unless otherwise noted
Q
Steady State
g
12 nC
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Devices
• DC/DC Converter
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
I
thJA
thJF
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
100
60
G
P-Channel MOSFET
- 55 to 150
- 4.4
- 0.8
0.96
0.62
- 3.5
Limit
- 4.7
- 1.4
- 5.8
- 20
± 8
1.7
1.1
- 8
a, b
a, b
a, b
a, b
a, b
S
D
Maximum
130
75
Vishay Siliconix
Si2305CDS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI2305CDS-T1-GE3 Summary of contents

Page 1

... TO-236 (SOT-23 Top View Si2305CDS (N5)* * Marking Code Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si2305CDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 64847 S10-0720-Rev. C, 29-Mar- 1 2.0 2.5 3 Si2305CDS Vishay Siliconix 125 ° ° ° 0.0 0.3 0.6 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 1800 1500 C iss 1200 900 600 C C oss rss 300 Drain-to-Source Voltage (V) ...

Page 4

... Si2305CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.6 0.5 0.4 0.3 0.2 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.10 0.08 0.06 0. °C J 0.02 0.00 0.9 1 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64847 S10-0720-Rev. C, 29-Mar-10 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si2305CDS Vishay Siliconix 2.0 1.6 1.2 0.8 0.4 0.0 25 ...

Page 6

... Si2305CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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